Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Ashkan Behnam, Saber Haji, Farshid Karbassian, Shams Mohajerzadeh, Aida Ebrahimi, Yaser Abdi, Michael D. Robertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages441-446
Number of pages6
StatePublished - Jun 12 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 21 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume910
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/21/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Behnam, A., Haji, S., Karbassian, F., Mohajerzadeh, S., Ebrahimi, A., Abdi, Y., & Robertson, M. D. (2007). Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (pp. 441-446). (Materials Research Society Symposium Proceedings; Vol. 910).