Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Ashkan Behnam, Saber Haji, Farshid Karbassian, Shams Mohajerzadeh, Seyedehaida Ebrahimi, Yaser Abdi, Michael D. Robertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages441-446
Number of pages6
Volume910
StatePublished - Jun 12 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 21 2006

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/21/06

Fingerprint

Nanocrystalline silicon
Silicon
Thin film transistors
Crystallization
Hydrogenation
hydrogenation
transistors
Metals
crystallization
silicon
Substrates
plastics
thin films
metals
Plastics
Tensile strain
Electron mobility
electron mobility
Structural properties
crystallinity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Behnam, A., Haji, S., Karbassian, F., Mohajerzadeh, S., Ebrahimi, S., Abdi, Y., & Robertson, M. D. (2007). Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (Vol. 910, pp. 441-446)
Behnam, Ashkan ; Haji, Saber ; Karbassian, Farshid ; Mohajerzadeh, Shams ; Ebrahimi, Seyedehaida ; Abdi, Yaser ; Robertson, Michael D. / Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910 2007. pp. 441-446
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abstract = "The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 {\%}. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.",
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Behnam, A, Haji, S, Karbassian, F, Mohajerzadeh, S, Ebrahimi, S, Abdi, Y & Robertson, MD 2007, Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. vol. 910, pp. 441-446, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/18/06.

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. / Behnam, Ashkan; Haji, Saber; Karbassian, Farshid; Mohajerzadeh, Shams; Ebrahimi, Seyedehaida; Abdi, Yaser; Robertson, Michael D.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910 2007. p. 441-446.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

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Behnam A, Haji S, Karbassian F, Mohajerzadeh S, Ebrahimi S, Abdi Y et al. Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910. 2007. p. 441-446