Nanocavity generation in SiO2 by Kr and Xe ion implantation

H. Assaf, E. Ntsoenzok, E. Leoni, M. F. Barthe, M. O. Ruault, O. Kaitasov, S. Ashok

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Implantation of heavy inert gas ions such as Kr and Xe are found to form nanometer-size bubbles/cavities in thermally grown silicon dioxide. Implantation energies were chosen to produce the same projected range Rp ∼125 nm for the two ions. The bubble/cavity distribution and size are found to be ion-mass-dependent. After thermal annealing the SiO2 layer implanted with Kr is bubble free while thermal growth of bubbles/cavities is observed for the sample implanted with Xe. These bubbles/cavities created in SiO2 are reflected by significant reduction in its dielectric constant, thus offering the prospect for an original way of generating low- k materials.

Original languageEnglish (US)
Pages (from-to)G72-G75
JournalElectrochemical and Solid-State Letters
Issue number10
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Nanocavity generation in SiO2 by Kr and Xe ion implantation'. Together they form a unique fingerprint.

Cite this