Nanocavity generation in SiO2 by Kr and Xe ion implantation

H. Assaf, E. Ntsoenzok, E. Leoni, M. F. Barthe, M. O. Ruault, O. Kaitasov, S. Ashok

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Abstract

Implantation of heavy inert gas ions such as Kr and Xe are found to form nanometer-size bubbles/cavities in thermally grown silicon dioxide. Implantation energies were chosen to produce the same projected range Rp ∼125 nm for the two ions. The bubble/cavity distribution and size are found to be ion-mass-dependent. After thermal annealing the SiO2 layer implanted with Kr is bubble free while thermal growth of bubbles/cavities is observed for the sample implanted with Xe. These bubbles/cavities created in SiO2 are reflected by significant reduction in its dielectric constant, thus offering the prospect for an original way of generating low- k materials.

Original languageEnglish (US)
Pages (from-to)G72-G75
JournalElectrochemical and Solid-State Letters
Volume10
Issue number10
DOIs
StatePublished - Jan 1 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Assaf, H., Ntsoenzok, E., Leoni, E., Barthe, M. F., Ruault, M. O., Kaitasov, O., & Ashok, S. (2007). Nanocavity generation in SiO2 by Kr and Xe ion implantation. Electrochemical and Solid-State Letters, 10(10), G72-G75. https://doi.org/10.1149/1.2757124