Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

Mariona Coll, Jaume Gazquez, Ignasi Fina, Zakariya Khayat, Andy Quindeau, Marin Alexe, Maria Varela, Susan Trolier-Mckinstry, Xavier Obradors, Teresa Puig

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Abstract

In this work, ferroelectricity is identified in nanocrystalline BiFeO3 (BFO) thin films prepared by low-temperature atomic layer deposition. A combination of X-ray diffraction, reflection high energy electron diffraction, and scanning transmission electron microscopy analysis indicates that the as-deposited films (250 °C) consist of BFO nanocrystals embedded in an amorphous matrix. Postannealing at 650 °C for 60 min converts the sample to a crystalline film on a SrTiO3 substrate. Piezoelectric force microscopy demonstrates the existence of ferroelectricity in both as-deposited and postannealed films. The ferroelectric behavior in the as-deposited stage is attributed to the presence of nanocrystals. Finally, a band gap of 2.7 eV was measured by spectroscopic ellipsometry. This study opens broad possibilities toward ferroelectric oxides on 3D substrates and also for the development of new ferroelectric perovskites prepared at low temperature.

Original languageEnglish (US)
Pages (from-to)6322-6328
Number of pages7
JournalChemistry of Materials
Volume27
Issue number18
DOIs
StatePublished - Sep 22 2015

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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    Coll, M., Gazquez, J., Fina, I., Khayat, Z., Quindeau, A., Alexe, M., Varela, M., Trolier-Mckinstry, S., Obradors, X., & Puig, T. (2015). Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition. Chemistry of Materials, 27(18), 6322-6328. https://doi.org/10.1021/acs.chemmater.5b02093