TY - JOUR
T1 - Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam
AU - Xu, Shengyong
AU - Tian, Mingliang
AU - Wang, Jinguo
AU - Xu, Jian
AU - Redwing, Joan M.
AU - Chan, Moses H.W.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - We demonstrate that a high-intensity electron beam can be applied to create holes, gaps, and other patterns of atomic and nanometer dimensions on a single nanowire, to weld individual nanowires to form metal-metal or metal-semiconductor junctions, and to remove the oxide shell from a crystalline nanowire. In single-crystalline Si nanowires, the beam induces instant local vaporization and local amorphization. In metallic Au, Ag, Cu, and Sn nanowires, the beam induces rapid local surface melting and enhanced surface diffusion, in addition to local vaporization. These studies open up a novel approach for patterning and connecting nanomaterials in devices and circuits at the nanometer scale.
AB - We demonstrate that a high-intensity electron beam can be applied to create holes, gaps, and other patterns of atomic and nanometer dimensions on a single nanowire, to weld individual nanowires to form metal-metal or metal-semiconductor junctions, and to remove the oxide shell from a crystalline nanowire. In single-crystalline Si nanowires, the beam induces instant local vaporization and local amorphization. In metallic Au, Ag, Cu, and Sn nanowires, the beam induces rapid local surface melting and enhanced surface diffusion, in addition to local vaporization. These studies open up a novel approach for patterning and connecting nanomaterials in devices and circuits at the nanometer scale.
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U2 - 10.1002/smll.200500240
DO - 10.1002/smll.200500240
M3 - Article
C2 - 17193423
AN - SCOPUS:33144486257
VL - 1
SP - 1221
EP - 1229
JO - Small
JF - Small
SN - 1613-6810
IS - 12
ER -