Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam

Shengyong Xu, Mingliang Tian, Jinguo Wang, Jian Xu, Joan M. Redwing, Moses H.W. Chan

Research output: Contribution to journalArticle

145 Scopus citations

Abstract

We demonstrate that a high-intensity electron beam can be applied to create holes, gaps, and other patterns of atomic and nanometer dimensions on a single nanowire, to weld individual nanowires to form metal-metal or metal-semiconductor junctions, and to remove the oxide shell from a crystalline nanowire. In single-crystalline Si nanowires, the beam induces instant local vaporization and local amorphization. In metallic Au, Ag, Cu, and Sn nanowires, the beam induces rapid local surface melting and enhanced surface diffusion, in addition to local vaporization. These studies open up a novel approach for patterning and connecting nanomaterials in devices and circuits at the nanometer scale.

Original languageEnglish (US)
Pages (from-to)1221-1229
Number of pages9
JournalSmall
Volume1
Issue number12
DOIs
StatePublished - Dec 1 2005

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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