Abstract
We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovoltaic effects and the spectral response of the photocurrent were explored to illustrate the reversible bandgap variation (∼0.3 eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandgap variation in ferroelectric perovskite oxides. This reversible bandgap tuning in complex oxides demonstrates a framework for the understanding of the optically related behaviors (photovoltaic, photoemission, and photocatalyst effects) affected by order parameters such as charge, orbital, and lattice parameters.
Original language | English (US) |
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Pages (from-to) | 24704-24710 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 29 |
DOIs | |
State | Published - Jul 26 2017 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)