We report on a simple electromechanical memory device in which an iron nanoparticle shuttle is controllably positioned within a hollow nanotube channel. The shuttle can be moved reversibly via an electrical write signal and can be positioned with nanoscale precision. The position of the shuttle can be read out directly via a blind resistance read measurement, allowing application as a nonvolatile memory element with potentially hundreds of memory states per device. The shuttle memory has application for archival storage, with information density as high as 10 12 bits/in 2, and thermodynamic stability in excess of one billion years.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering