We report a new, to the best of our knowledge, type of SI-GaAs photoconductive semiconductor switch (PCSS) with nanostructures. Since light can enter from both the top and side surfaces of nanostructures, the effective penetration depth is significantly increased. Lower on-state resistance and a longer lock-on time have been achieved in the nonlinear mode with this design, as well as a lower triggering fluence in the linear mode. This could be highly useful for a variety of applications that require lower on-state resistance and/or longer lock-on time such as pulsed power systems and firing set switches.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Feb 15 2021|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics