Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches

Ruijia Liu, Annan Shang, Chang Jiang Chen, Yun Goo Lee, Shizhuo Yin

Research output: Contribution to journalArticlepeer-review

Abstract

We report a new, to the best of our knowledge, type of SI-GaAs photoconductive semiconductor switch (PCSS) with nanostructures. Since light can enter from both the top and side surfaces of nanostructures, the effective penetration depth is significantly increased. Lower on-state resistance and a longer lock-on time have been achieved in the nonlinear mode with this design, as well as a lower triggering fluence in the linear mode. This could be highly useful for a variety of applications that require lower on-state resistance and/or longer lock-on time such as pulsed power systems and firing set switches.

Original languageEnglish (US)
Pages (from-to)825-828
Number of pages4
JournalOptics Letters
Volume46
Issue number4
DOIs
StatePublished - Feb 15 2021

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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