Nanostructured multilayer metal/por-Si structures based on CoSi2 film: Optical and electronic properties

Igor Belousov, Oleg Pchelyakov, Sergey Romanov, Nina Kovtyukhova, Sergiy Putselyk, Konstantin Yakovkin, Danila Zherebetskiy, Alexsander Gorchinskiy, Galina Popova, Eugenia Buzaneva

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Abstract

To create nanostructured multilayer Co/por-Si structures based on CoSi2 film with determined size and distribution of the nanocrystals, the interaction between the 6.5-nm Co layer and the por-Si layer surface in vacuum was used. The formation of the self-ordered system based on top layer of CoSi2 nanocrystals, intermediated layer (130-150 nm) contained 3-11 nm Si nanocrystals, and por-Si layer (1.1; 1.2; 1.4 μm) grown on the single crystal Si was experimentally confirmed by TEM, AFM, scanning tunnelling, IR, and UV - VIS spectroscopies. The formed por-CoSi2/por-Si structures have novel optical and electronic properties in comparison with por-Si: the IR bands of maximal absorption (648-1275 cm-1) and maximal reflectance (2000-3200 cm11); the maximal reflectance (up to 80%) at 800-900 nm, the optical bandgap of Si nanocrystals is Eg = 1.2-2.6 eV, and the height of the barrier of CoSi2/nano-Si structures is 0.7-0.95 eV.

Original languageEnglish (US)
Pages (from-to)247-249
Number of pages3
JournalMaterials Science and Engineering C
Volume19
Issue number1-2
DOIs
StatePublished - Jan 2 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Belousov, I., Pchelyakov, O., Romanov, S., Kovtyukhova, N., Putselyk, S., Yakovkin, K., Zherebetskiy, D., Gorchinskiy, A., Popova, G., & Buzaneva, E. (2002). Nanostructured multilayer metal/por-Si structures based on CoSi2 film: Optical and electronic properties. Materials Science and Engineering C, 19(1-2), 247-249. https://doi.org/10.1016/S0928-4931(01)00485-4