To create nanostructured multilayer Co/por-Si structures based on CoSi2 film with determined size and distribution of the nanocrystals, the interaction between the 6.5-nm Co layer and the por-Si layer surface in vacuum was used. The formation of the self-ordered system based on top layer of CoSi2 nanocrystals, intermediated layer (130-150 nm) contained 3-11 nm Si nanocrystals, and por-Si layer (1.1; 1.2; 1.4 μm) grown on the single crystal Si was experimentally confirmed by TEM, AFM, scanning tunnelling, IR, and UV - VIS spectroscopies. The formed por-CoSi2/por-Si structures have novel optical and electronic properties in comparison with por-Si: the IR bands of maximal absorption (648-1275 cm-1) and maximal reflectance (2000-3200 cm11); the maximal reflectance (up to 80%) at 800-900 nm, the optical bandgap of Si nanocrystals is Eg = 1.2-2.6 eV, and the height of the barrier of CoSi2/nano-Si structures is 0.7-0.95 eV.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering