A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Feb 25 2002|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)