Nanotube devices: A microscopic model

K. A. Bulashevich, Vyacheslav Rotkin

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.

Original languageEnglish (US)
Pages (from-to)205-209
Number of pages5
JournalJETP Letters
Volume75
Issue number4
DOIs
StatePublished - Feb 25 2002

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nanotubes
capacitance
curvature
electrostatics
tubes
conduction
radii
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Bulashevich, K. A. ; Rotkin, Vyacheslav. / Nanotube devices : A microscopic model. In: JETP Letters. 2002 ; Vol. 75, No. 4. pp. 205-209.
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Nanotube devices : A microscopic model. / Bulashevich, K. A.; Rotkin, Vyacheslav.

In: JETP Letters, Vol. 75, No. 4, 25.02.2002, p. 205-209.

Research output: Contribution to journalArticle

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