Narrow Linewidth Photoluminescence from Top-Down Fabricated 20 nm InGaN/GaN Quantum Dots at Room Temperature

Bryan Melanson, David Starling, Matt Hartensveld, Gregory Howland, Stefan Preble, Jing Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Promising narrow linewidth photoluminescence with a FWHM of 7.1 nm at wavelength 418 nm was achieved at room temperature from InGaN/GaN quantum dots in a 20-nm-diameter top-down fabricated nanowire.

Original languageEnglish (US)
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580767
StatePublished - May 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: May 10 2020May 15 2020

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
CountryUnited States
CitySan Jose
Period5/10/205/15/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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