NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.

Howard S. Witham, Patrick M. Lenahan

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
VolumeNS-34
Issue number6
StatePublished - Dec 1987

All Science Journal Classification (ASJC) codes

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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