NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.

Howard S. Witham, Patrick M. Lenahan

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
VolumeNS-34
Issue number6
StatePublished - Dec 1987

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Hole traps
traps
Oxides
Capacitance measurement
oxides
Voltage measurement
Oxygen vacancies
Paramagnetic resonance
Irradiation
metal oxide semiconductors
electrical measurement
Electrons
electron paramagnetic resonance
capacitance
Metals
trapping
gradients
irradiation
oxygen
electrons

All Science Journal Classification (ASJC) codes

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

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abstract = "The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).",
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NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES. / Witham, Howard S.; Lenahan, Patrick M.

In: IEEE Transactions on Nuclear Science, Vol. NS-34, No. 6, 12.1987.

Research output: Contribution to journalArticle

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AB - The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).

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