Nature of the E' deep hole trap in metal-oxide-semiconductor oxides

H. S. Witham, P. M. Lenahan

Research output: Contribution to journalArticlepeer-review

91 Scopus citations

Abstract

We have found through a sequence of ultraviolet illuminations, electron spin resonance measurements, and capacitance versus voltage measurements, that the E' deep hole trap in metal-oxide-semiconductor silicon dioxide is a fundamentally reversible defect. Our results are totally consistent with an oxygen vacancy model for the E' deep hole trap, but our results are inconsistent with the bond strain gradient model for the deep hole trap in metal-oxide-semiconductor silicon dioxide.

Original languageEnglish (US)
Pages (from-to)1007-1009
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number13
DOIs
StatePublished - 1987

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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