Nb-doped single crystalline MoS2 field effect transistor

Saptarshi Das, Marcellinus Demarteau, Andreas Roelofs

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Abstract

We report on the demonstration of a p-type, single crystalline, few layer MoS2 field effect transistor (FET) using Niobium (Nb) as the dopant. The doping concentration was extracted and determined to be ∼3-×-1019/cm3. We also report on bilayer Nb-doped MoS2 FETs with ambipolar conduction. We found that the current ON-OFF ratio of the Nb-doped MoS2 FETs changes significantly as a function of the flake thickness. We attribute this experimental observation to bulk-type electrostatic effect in ultra-thin MoS2 crystals. We provide detailed analytical modeling in support of our claims. Finally, we show that in the presence of heavy doping, even ultra-thin 2D-semiconductors cannot be fully depleted and may behave as a 3D material when used in transistor geometry. Our findings provide important insights into the doping constraints of 2D materials, in general.

Original languageEnglish (US)
Article number173506
JournalApplied Physics Letters
Volume106
Issue number17
DOIs
StatePublished - Apr 27 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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