NBTI in n-type SOI access FinFETs in SRAMs and its impact on cell stability and performance

Sumeet Kumar Gupta, Georgios Panagopoulos, Kaushik Roy

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We identify the possibility of negative-bias temperature instability (NBTI) in n-type silicon-on-insulator (SOI) FinFETs used as access transistors in SRAMs. We discuss that in the hold state of the SRAM cell, one of the access transistors may operate in the accumulation region and experience NBTI degradation. We compare NBTI in p- and n-type SOI FinFETs and show that NBTI in n-FinFETs affects only a part of the channel due to the presence of n + source/drain regions. Worst case analysis of the joint effect of NBTI in access and pull-up FinFETs on cell stability and performance of 6T SRAMs is carried out and compared with the conventional approach of considering NBTI in pull-up FinFETs only.

Original languageEnglish (US)
Article number6269071
Pages (from-to)2603-2609
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume59
Issue number10
DOIs
StatePublished - Aug 21 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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