Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Wenjia Hu, Ron Henderson, Yu Zhang, Guanjun You, Lai Wei, Yangbo Bai, Jingkang Wang, Jian Xu

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Abstract

PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

Original languageEnglish (US)
Article number375202
JournalNanotechnology
Volume23
Issue number37
DOIs
StatePublished - Sep 21 2012

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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