Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Wenjia Hu, Ron Henderson, Yu Zhang, Guanjun You, Lai Wei, Yangbo Bai, Jingkang Wang, Jian Xu

Research output: Contribution to journalArticle

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PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

Original languageEnglish (US)
Article number375202
Issue number37
StatePublished - Sep 21 2012


All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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