Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

C. E. Gonzalez, S. C. Sharma, N. Hozhabri, D. Z. Chi, S Ashok

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500°C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5 × 1017 cm-3.

Original languageEnglish (US)
Pages (from-to)643-645
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume68
Issue number6
DOIs
StatePublished - Jun 1 1999

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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