Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500°C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5 × 1017 cm-3.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Jun 1 1999|
All Science Journal Classification (ASJC) codes
- Materials Science(all)