Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

C. J. Cochrane, Patrick M. Lenahan, J. P. Campbell, G. Bersuker, A. Neugroschel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We combine conventional metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance (ESR) measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect transistors (pMOSFETs). The spectra were found to be quite different from those generated by NBTI in conventional Si/SiO2 based devices. The defect spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide Si/SiO2 based devices. These traces are similar in that their ESR g values are virtually identical. Our results strongly suggest that, in these HfO2 based devices, NBTI defects are located in the interfacial SiO2 layer.

Original languageEnglish (US)
Title of host publication2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Pages11-15
Number of pages5
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, United States
Duration: Oct 16 2006Oct 19 2006

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/16/0610/19/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Cochrane, C. J., Lenahan, P. M., Campbell, J. P., Bersuker, G., & Neugroschel, A. (2006). Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (pp. 11-15). [4098678] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2006.305201