Neutron radiation effects in gold and aluminum GaAs schottky diodes

J. M. Borrego, R. J. Gutmann, S. Ashok

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The electrical characteristics of guarded Au-and Al-n GaAs Schottky diodes with free carrier concentration in the range of 3 × 10 to 8 × 10 cm have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the C-V and the forward I-V characteristics but increase significantly the reverse current. Assuming Levine's model for a Schottky barrier, the slight changes in the I-V characteristics at forward bias and small reverse bias voltage have been attributed to a change in the distribution of interface states at the metal-semiconductor interface. The excess, non-thermionic reverse current observed after low fluence neutron irradiation is not due to surface leakage or classical generation-recombination but appears to be due to a high field process. Consideration of several high field effect mechanisms indicates that field emission from a deep level is the likely cause.

Original languageEnglish (US)
Pages (from-to)1671-1678
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume23
Issue number6
DOIs
StatePublished - Dec 1976

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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