New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

Mattia Cattelan, Brian Markman, Giacomo Lucchini, Pranab Kumar Das, Ivana Vobornik, Joshua Alexander Robinson, Stefano Agnoli, Gaetano Granozzi

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19 Scopus citations

Abstract

Tungsten disulfide (WS2) monolayers have been synthesized under ultra high vacuum (UHV) conditions on quasi-free-standing hexagonal boron nitride (h-BN) and gold deposited on Ni(111). We find that the synthesis temperature control can be used to tune the WS2 structure. As documented by in situ core level and valence band photoemission and by ex situ Raman spectroscopy, the partially disordered WS2 layer obtained at room temperature transforms to the 2H-WS2 phase at about 400°C. Low energy electron diffraction confirms the existence of van der Waals epitaxy between WS2 and h-BN and gold substrates. The measured band structure indicates that the WS2 electronic structure is not affected by the interaction with the h-BN and gold substrates.

Original languageEnglish (US)
Pages (from-to)4105-4113
Number of pages9
JournalChemistry of Materials
Volume27
Issue number11
DOIs
StatePublished - Jun 9 2015

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Cattelan, M., Markman, B., Lucchini, G., Das, P. K., Vobornik, I., Robinson, J. A., Agnoli, S., & Granozzi, G. (2015). New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials. Chemistry of Materials, 27(11), 4105-4113. https://doi.org/10.1021/acs.chemmater.5b01170