New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping

M. A. Anders, Patrick M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on an approach for MOSFET interface defect characterization called spin dependent charge pumping. This approach utilizes ultra-low and high magnetic resonance resonance frequencies. We find that it is a very useful tool for interface characterization in 4H-SiC MOSFETs. We also report on a new technique called zero field spin dependent charge pumping which has the potential to be a low-cost simple interface defect characterization technique.

Original languageEnglish (US)
Title of host publication2017 IEEE International Integrated Reliability Workshop, IIRW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
Volume2017-October
ISBN (Electronic)9781538623329
DOIs
StatePublished - May 18 2018
Event2017 IEEE International Integrated Reliability Workshop, IIRW 2017 - South Lake Tahoe, United States
Duration: Oct 8 2017Oct 12 2017

Other

Other2017 IEEE International Integrated Reliability Workshop, IIRW 2017
CountryUnited States
CitySouth Lake Tahoe
Period10/8/1710/12/17

Fingerprint

Magnetic fields
Defects
Magnetic resonance
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Anders, M. A., Lenahan, P. M., & Lelis, A. J. (2018). New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping. In 2017 IEEE International Integrated Reliability Workshop, IIRW 2017 (Vol. 2017-October, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2017.8361228
Anders, M. A. ; Lenahan, Patrick M. ; Lelis, A. J. / New tools for MOSFET interface defect characterization : High, ultra-low, and zero magnetic field spin dependent charge pumping. 2017 IEEE International Integrated Reliability Workshop, IIRW 2017. Vol. 2017-October Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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Anders, MA, Lenahan, PM & Lelis, AJ 2018, New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping. in 2017 IEEE International Integrated Reliability Workshop, IIRW 2017. vol. 2017-October, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 2017 IEEE International Integrated Reliability Workshop, IIRW 2017, South Lake Tahoe, United States, 10/8/17. https://doi.org/10.1109/IIRW.2017.8361228

New tools for MOSFET interface defect characterization : High, ultra-low, and zero magnetic field spin dependent charge pumping. / Anders, M. A.; Lenahan, Patrick M.; Lelis, A. J.

2017 IEEE International Integrated Reliability Workshop, IIRW 2017. Vol. 2017-October Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Anders MA, Lenahan PM, Lelis AJ. New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping. In 2017 IEEE International Integrated Reliability Workshop, IIRW 2017. Vol. 2017-October. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/IIRW.2017.8361228