@inproceedings{02b5aa00522b4e3e8928e4e7b8c59088,
title = "New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping",
abstract = "We report on an approach for MOSFET interface defect characterization called spin dependent charge pumping. This approach utilizes ultra-low and high magnetic resonance resonance frequencies. We find that it is a very useful tool for interface characterization in 4H-SiC MOSFETs. We also report on a new technique called zero field spin dependent charge pumping which has the potential to be a low-cost simple interface defect characterization technique.",
author = "Anders, {M. A.} and Lenahan, {P. M.} and Lelis, {A. J.}",
year = "2018",
month = may,
day = "18",
doi = "10.1109/IIRW.2017.8361228",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "2017 IEEE International Integrated Reliability Workshop, IIRW 2017",
address = "United States",
note = "2017 IEEE International Integrated Reliability Workshop, IIRW 2017 ; Conference date: 08-10-2017 Through 12-10-2017",
}