New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping

M. A. Anders, P. M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on an approach for MOSFET interface defect characterization called spin dependent charge pumping. This approach utilizes ultra-low and high magnetic resonance resonance frequencies. We find that it is a very useful tool for interface characterization in 4H-SiC MOSFETs. We also report on a new technique called zero field spin dependent charge pumping which has the potential to be a low-cost simple interface defect characterization technique.

Original languageEnglish (US)
Title of host publication2017 IEEE International Integrated Reliability Workshop, IIRW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538623329
DOIs
StatePublished - May 18 2018
Event2017 IEEE International Integrated Reliability Workshop, IIRW 2017 - South Lake Tahoe, United States
Duration: Oct 8 2017Oct 12 2017

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2017-October

Other

Other2017 IEEE International Integrated Reliability Workshop, IIRW 2017
CountryUnited States
CitySouth Lake Tahoe
Period10/8/1710/12/17

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Anders, M. A., Lenahan, P. M., & Lelis, A. J. (2018). New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping. In 2017 IEEE International Integrated Reliability Workshop, IIRW 2017 (pp. 1-4). (IEEE International Integrated Reliability Workshop Final Report; Vol. 2017-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2017.8361228