Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

L. S. Yu, D. J. Qiao, Q. J. Xing, S. S. Lau, K. S. Boutros, Joan Marie Redwing

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Abstract

The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.

Original languageEnglish (US)
Pages (from-to)238-240
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number2
DOIs
StatePublished - Dec 1 1998

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Yu, L. S., Qiao, D. J., Xing, Q. J., Lau, S. S., Boutros, K. S., & Redwing, J. M. (1998). Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates. Applied Physics Letters, 73(2), 238-240. https://doi.org/10.1063/1.121767
Yu, L. S. ; Qiao, D. J. ; Xing, Q. J. ; Lau, S. S. ; Boutros, K. S. ; Redwing, Joan Marie. / Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates. In: Applied Physics Letters. 1998 ; Vol. 73, No. 2. pp. 238-240.
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Yu, LS, Qiao, DJ, Xing, QJ, Lau, SS, Boutros, KS & Redwing, JM 1998, 'Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates', Applied Physics Letters, vol. 73, no. 2, pp. 238-240. https://doi.org/10.1063/1.121767

Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates. / Yu, L. S.; Qiao, D. J.; Xing, Q. J.; Lau, S. S.; Boutros, K. S.; Redwing, Joan Marie.

In: Applied Physics Letters, Vol. 73, No. 2, 01.12.1998, p. 238-240.

Research output: Contribution to journalArticle

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