Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

L. S. Yu, D. J. Qiao, Q. J. Xing, S. S. Lau, K. S. Boutros, J. M. Redwing

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Abstract

The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.

Original languageEnglish (US)
Pages (from-to)238-240
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number2
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Yu, L. S., Qiao, D. J., Xing, Q. J., Lau, S. S., Boutros, K. S., & Redwing, J. M. (1998). Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates. Applied Physics Letters, 73(2), 238-240. https://doi.org/10.1063/1.121767