The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)