Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires

S. M. Woodruff, N. S. Dellas, Bangzhi Liu, S. M. Eichfeld, T. S. Mayer, Joan Marie Redwing, Suzanne E. Mohney

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Schottky contacts to n -type silicon nanowires were fabricated using Ni or nickel silicide contacts in a wraparound or end contact geometry, respectively. Series resistance in the test structures was reduced by heavily doping the opposite end of the silicon nanowire, facilitating Ohmic contact formation and reducing the resistance of the nanowire itself. The effective Schottky barrier height is reported as a function of nanowire doping, ambient, and applied back gate bias, highlighting some of the important variables affecting current transport in Schottky contacts to semiconductor nanowires. For the silicide contact to the most lightly doped silicon nanowire, measurements in N2 showed that the effective barrier height without a back gate bias was 0.69 eV, and the ideality factor was 1.1.

Original languageEnglish (US)
Pages (from-to)1592-1596
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number4
DOIs
StatePublished - Jan 1 2008

Fingerprint

Nanowires
nanowires
Nickel
nickel
Silicon
silicon
electric contacts
Doping (additives)
Ohmic contacts
Semiconductor materials
Geometry
geometry

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Schottky contacts to n -type silicon nanowires were fabricated using Ni or nickel silicide contacts in a wraparound or end contact geometry, respectively. Series resistance in the test structures was reduced by heavily doping the opposite end of the silicon nanowire, facilitating Ohmic contact formation and reducing the resistance of the nanowire itself. The effective Schottky barrier height is reported as a function of nanowire doping, ambient, and applied back gate bias, highlighting some of the important variables affecting current transport in Schottky contacts to semiconductor nanowires. For the silicide contact to the most lightly doped silicon nanowire, measurements in N2 showed that the effective barrier height without a back gate bias was 0.69 eV, and the ideality factor was 1.1.",
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Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires. / Woodruff, S. M.; Dellas, N. S.; Liu, Bangzhi; Eichfeld, S. M.; Mayer, T. S.; Redwing, Joan Marie; Mohney, Suzanne E.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 4, 01.01.2008, p. 1592-1596.

Research output: Contribution to journalArticle

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AU - Woodruff, S. M.

AU - Dellas, N. S.

AU - Liu, Bangzhi

AU - Eichfeld, S. M.

AU - Mayer, T. S.

AU - Redwing, Joan Marie

AU - Mohney, Suzanne E.

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