Nickel diffusion into MoS2 and the effect of annealing on contact resistance

Timothy N. Walter, Kayla A. Cooley, Anna C. Domask, Suzanne E. Mohney

Research output: Contribution to journalArticle

Abstract

Metal-semiconductor interfaces are crucial for the performance of many devices and understanding interactions between material interfaces after processing is therefore of interest. Here, field-effect transistors with Ni contacts are studied to determine the effects of annealing on contact resistance. Contact resistance and total resistance of as-deposited and annealed field-effect transistors with Ni/Ti/Au contacts increase upon annealing, with higher annealing temperatures yielding a greater increase in contact resistance. It appears that Ni diffusion into MoS2 correlates with the observed higher contact resistance, and transmission electron microscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy reveal the presence of Ni in single crystal MoS2 flakes after annealing Ni/MoS2 in ultra-high purity Ar gas at 400 °C. Metal diffusion into 2D semiconductors like MoS2 may help or hurt device performance, and this work highlights the importance of considering the effects metal diffusion may have on contact resistance.

Original languageEnglish (US)
Article number104850
JournalMaterials Science in Semiconductor Processing
Volume107
DOIs
StatePublished - Mar 1 2020

Fingerprint

Contact resistance
contact resistance
Nickel
nickel
Annealing
annealing
Metals
Field effect transistors
electric contacts
field effect transistors
metals
Semiconductor materials
Electron energy loss spectroscopy
flakes
spectroscopy
Energy dispersive spectroscopy
purity
energy dissipation
Gases
Single crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Metal-semiconductor interfaces are crucial for the performance of many devices and understanding interactions between material interfaces after processing is therefore of interest. Here, field-effect transistors with Ni contacts are studied to determine the effects of annealing on contact resistance. Contact resistance and total resistance of as-deposited and annealed field-effect transistors with Ni/Ti/Au contacts increase upon annealing, with higher annealing temperatures yielding a greater increase in contact resistance. It appears that Ni diffusion into MoS2 correlates with the observed higher contact resistance, and transmission electron microscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy reveal the presence of Ni in single crystal MoS2 flakes after annealing Ni/MoS2 in ultra-high purity Ar gas at 400 °C. Metal diffusion into 2D semiconductors like MoS2 may help or hurt device performance, and this work highlights the importance of considering the effects metal diffusion may have on contact resistance.",
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Nickel diffusion into MoS2 and the effect of annealing on contact resistance. / Walter, Timothy N.; Cooley, Kayla A.; Domask, Anna C.; Mohney, Suzanne E.

In: Materials Science in Semiconductor Processing, Vol. 107, 104850, 01.03.2020.

Research output: Contribution to journalArticle

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AU - Walter, Timothy N.

AU - Cooley, Kayla A.

AU - Domask, Anna C.

AU - Mohney, Suzanne E.

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AB - Metal-semiconductor interfaces are crucial for the performance of many devices and understanding interactions between material interfaces after processing is therefore of interest. Here, field-effect transistors with Ni contacts are studied to determine the effects of annealing on contact resistance. Contact resistance and total resistance of as-deposited and annealed field-effect transistors with Ni/Ti/Au contacts increase upon annealing, with higher annealing temperatures yielding a greater increase in contact resistance. It appears that Ni diffusion into MoS2 correlates with the observed higher contact resistance, and transmission electron microscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy reveal the presence of Ni in single crystal MoS2 flakes after annealing Ni/MoS2 in ultra-high purity Ar gas at 400 °C. Metal diffusion into 2D semiconductors like MoS2 may help or hurt device performance, and this work highlights the importance of considering the effects metal diffusion may have on contact resistance.

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