Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

Yao Jin, David Saint John, Thomas Nelson Jackson, Mark William Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar + ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XL
PublisherSPIE
Volume9070
ISBN (Print)9781628410075
DOIs
StatePublished - Jan 1 2014
Event40th Conference on Infrared Technology and Applications - Baltimore, MD, United States
Duration: May 5 2014May 8 2014

Other

Other40th Conference on Infrared Technology and Applications
CountryUnited States
CityBaltimore, MD
Period5/5/145/8/14

Fingerprint

Molybdenum oxide
molybdenum oxides
Nickel oxide
Infrared Imaging
nickel oxides
Infrared imaging
Nickel
Ion beams
Oxide films
Biased
Oxides
Thin Films
ion beams
Vanadium
Thin films
Target
oxides
electrical resistivity
thin films
vanadium oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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title = "Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition",
abstract = "Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar + ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2{\%}/K to -3.3{\%}/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1{\%}/K to -3.2{\%}/K. We also report on the thermal stability of these deposited oxide thin films.",
author = "Yao Jin and John, {David Saint} and Jackson, {Thomas Nelson} and Horn, {Mark William}",
year = "2014",
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Jin, Y, John, DS, Jackson, TN & Horn, MW 2014, Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition. in Infrared Technology and Applications XL. vol. 9070, 90701S, SPIE, 40th Conference on Infrared Technology and Applications, Baltimore, MD, United States, 5/5/14. https://doi.org/10.1117/12.2053174

Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition. / Jin, Yao; John, David Saint; Jackson, Thomas Nelson; Horn, Mark William.

Infrared Technology and Applications XL. Vol. 9070 SPIE, 2014. 90701S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

AU - Jin, Yao

AU - John, David Saint

AU - Jackson, Thomas Nelson

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N2 - Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar + ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

AB - Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar + ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

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