Abstract
GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.
| Original language | English (US) |
|---|---|
| Article number | 092903 |
| Journal | Applied Physics Letters |
| Volume | 112 |
| Issue number | 9 |
| DOIs | |
| State | Published - Feb 26 2018 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces. / Paisley, Elizabeth A.; Brumbach, Michael T.; Shelton, Christopher T.; Allerman, Andrew A.; Atcitty, Stanley; Rost, Christina M.; Ohlhausen, James A.; Doyle, Barney L.; Sitar, Zlatko; Maria, Jon-Paul; Ihlefeld, Jon F.
In: Applied Physics Letters, Vol. 112, No. 9, 092903, 26.02.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
AU - Paisley, Elizabeth A.
AU - Brumbach, Michael T.
AU - Shelton, Christopher T.
AU - Allerman, Andrew A.
AU - Atcitty, Stanley
AU - Rost, Christina M.
AU - Ohlhausen, James A.
AU - Doyle, Barney L.
AU - Sitar, Zlatko
AU - Maria, Jon-Paul
AU - Ihlefeld, Jon F.
PY - 2018/2/26
Y1 - 2018/2/26
N2 - GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.
AB - GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.
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U2 - 10.1063/1.5013605
DO - 10.1063/1.5013605
M3 - Article
VL - 112
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 092903
ER -