@article{86e82b61f6b2431ba093041ae79b05c9,
title = "Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces",
abstract = "GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.",
author = "Paisley, {Elizabeth A.} and Brumbach, {Michael T.} and Shelton, {Christopher T.} and Allerman, {Andrew A.} and Stanley Atcitty and Rost, {Christina M.} and Ohlhausen, {James A.} and Doyle, {Barney L.} and Zlatko Sitar and Maria, {Jon Paul} and Ihlefeld, {Jon F.}",
note = "Funding Information: Band offset measurements and surface chemistry measurements of MgO on GaN were supported by the U.S. Department of Energy{\textquoteright}s Office of Electricity Delivery and Energy Reliability (OE) Energy Storage Program managed by Dr. Imre Gyuk. NCSU GaN film growth was supported by NSF program DMR-1508191. Dislocation density measurements were supported by ARO program W911NF-14-0285. The authors sincerely thank and acknowledge Dr. Anthony Rice for his critical review of this manuscript. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract No. DE-NA0003525. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = feb,
day = "26",
doi = "10.1063/1.5013605",
language = "English (US)",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",
}