Abstract
The phase noise of an oscillator with a thin-film barium strontium titanate (BST) capacitive tuning element, or varactor, is characterised and benchmarked against the same oscillator with a silicon semiconductor junction varactor. Phase noise tracks closely with varactor Q within a specific voltage range as expected. Compared to the semiconductor varactor-based oscillator, the BST-based oscillator demonstrates reduced phase noise degradation near zero volts, but greater phase noise degradation when operated near breakdown.
Original language | English (US) |
---|---|
Pages (from-to) | 96-102 |
Number of pages | 7 |
Journal | IEE Proceedings: Microwaves, Antennas and Propagation |
Volume | 153 |
Issue number | 1 |
DOIs | |
State | Published - Feb 2006 |
All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Electrical and Electronic Engineering