The phase noise of an oscillator with a thin-film barium strontium titanate (BST) capacitive tuning element, or varactor, is characterised and benchmarked against the same oscillator with a silicon semiconductor junction varactor. Phase noise tracks closely with varactor Q within a specific voltage range as expected. Compared to the semiconductor varactor-based oscillator, the BST-based oscillator demonstrates reduced phase noise degradation near zero volts, but greater phase noise degradation when operated near breakdown.
|Original language||English (US)|
|Number of pages||7|
|Journal||IEE Proceedings: Microwaves, Antennas and Propagation|
|State||Published - Feb 2006|
All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Electrical and Electronic Engineering