Noise characteristics of an oscillator with a barium strontium titanate (BST) varactor

A. Victor; J. Nath; D. Ghosh; B. Boyette; J. P. Maria; M. B. Steer; A. I. Kingon; G. T. Stauf

doi:10.1049/ip-map:20050068

Noise characteristics of an oscillator with a barium strontium titanate (BST) varactor

A. Victor, J. Nath, D. Ghosh, B. Boyette, J. P. Maria, M. B. Steer, A. I. Kingon, G. T. Stauf

Materials Science and Engineering

Research output: Contribution to journal › Article

10 Scopus citations

Abstract

The phase noise of an oscillator with a thin-film barium strontium titanate (BST) capacitive tuning element, or varactor, is characterised and benchmarked against the same oscillator with a silicon semiconductor junction varactor. Phase noise tracks closely with varactor Q within a specific voltage range as expected. Compared to the semiconductor varactor-based oscillator, the BST-based oscillator demonstrates reduced phase noise degradation near zero volts, but greater phase noise degradation when operated near breakdown.

Original language	English (US)
Pages (from-to)	96-102
Number of pages	7
Journal	IEE Proceedings: Microwaves, Antennas and Propagation
Volume	153
Issue number	1
DOIs	https://doi.org/10.1049/ip-map:20050068
State	Published - Feb 1 2006

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All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Electrical and Electronic Engineering

Cite this

Victor, A., Nath, J., Ghosh, D., Boyette, B., Maria, J. P., Steer, M. B., Kingon, A. I., & Stauf, G. T. (2006). Noise characteristics of an oscillator with a barium strontium titanate (BST) varactor. IEE Proceedings: Microwaves, Antennas and Propagation, 153(1), 96-102. https://doi.org/10.1049/ip-map:20050068

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AU - Maria, J. P.

AU - Steer, M. B.

AU - Kingon, A. I.

AU - Stauf, G. T.

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AB - The phase noise of an oscillator with a thin-film barium strontium titanate (BST) capacitive tuning element, or varactor, is characterised and benchmarked against the same oscillator with a silicon semiconductor junction varactor. Phase noise tracks closely with varactor Q within a specific voltage range as expected. Compared to the semiconductor varactor-based oscillator, the BST-based oscillator demonstrates reduced phase noise degradation near zero volts, but greater phase noise degradation when operated near breakdown.

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10.1049/ip-map:20050068