Non-invasive nature of corona charging on thermal Si/SiO2 structures

M. Dautrich, Patrick M. Lenahan, A. Y. Kang, J. F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.

Original languageEnglish (US)
Title of host publication2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages7-9
Number of pages3
Volume2003-January
ISBN (Electronic)0780381572
DOIs
StatePublished - 2003
Event2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States
Duration: Oct 20 2003Oct 23 2003

Other

Other2003 IEEE International Integrated Reliability Workshop, IRW 2003
CountryUnited States
CityLake Tahoe
Period10/20/0310/23/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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