Non-invasive nature of corona charging on thermal Si/SiO2 structures

M. Dautrich, Patrick M. Lenahan, A. Y. Kang, J. F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.

Original languageEnglish (US)
Title of host publication2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages7-9
Number of pages3
Volume2003-January
ISBN (Electronic)0780381572
DOIs
StatePublished - 2003
Event2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States
Duration: Oct 20 2003Oct 23 2003

Other

Other2003 IEEE International Integrated Reliability Workshop, IRW 2003
CountryUnited States
CityLake Tahoe
Period10/20/0310/23/03

Fingerprint

Paramagnetic resonance
Defect structures
Semiconductor devices
Defects
Experiments
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Dautrich, M., Lenahan, P. M., Kang, A. Y., & Conley, J. F. (2003). Non-invasive nature of corona charging on thermal Si/SiO2 structures. In 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003 (Vol. 2003-January, pp. 7-9). [1283290] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2003.1283290
Dautrich, M. ; Lenahan, Patrick M. ; Kang, A. Y. ; Conley, J. F. / Non-invasive nature of corona charging on thermal Si/SiO2 structures. 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 7-9
@inproceedings{574a6c97ee064c82b5a584458da00a4f,
title = "Non-invasive nature of corona charging on thermal Si/SiO2 structures",
abstract = "The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.",
author = "M. Dautrich and Lenahan, {Patrick M.} and Kang, {A. Y.} and Conley, {J. F.}",
year = "2003",
doi = "10.1109/IRWS.2003.1283290",
language = "English (US)",
volume = "2003-January",
pages = "7--9",
booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Dautrich, M, Lenahan, PM, Kang, AY & Conley, JF 2003, Non-invasive nature of corona charging on thermal Si/SiO2 structures. in 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. vol. 2003-January, 1283290, Institute of Electrical and Electronics Engineers Inc., pp. 7-9, 2003 IEEE International Integrated Reliability Workshop, IRW 2003, Lake Tahoe, United States, 10/20/03. https://doi.org/10.1109/IRWS.2003.1283290

Non-invasive nature of corona charging on thermal Si/SiO2 structures. / Dautrich, M.; Lenahan, Patrick M.; Kang, A. Y.; Conley, J. F.

2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 7-9 1283290.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Non-invasive nature of corona charging on thermal Si/SiO2 structures

AU - Dautrich, M.

AU - Lenahan, Patrick M.

AU - Kang, A. Y.

AU - Conley, J. F.

PY - 2003

Y1 - 2003

N2 - The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.

AB - The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.

UR - http://www.scopus.com/inward/record.url?scp=84947232052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947232052&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2003.1283290

DO - 10.1109/IRWS.2003.1283290

M3 - Conference contribution

VL - 2003-January

SP - 7

EP - 9

BT - 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Dautrich M, Lenahan PM, Kang AY, Conley JF. Non-invasive nature of corona charging on thermal Si/SiO2 structures. In 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 7-9. 1283290 https://doi.org/10.1109/IRWS.2003.1283290