Non-Ohmic electrical conductivity and giant dielectric constant in the quasi-one-dimensional semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide

Patrick M. Lenahan, T. J. Rowland

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Results of measurements of the resistivity ρ and the dielectric constant K of the one-dimensional organic semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide are described. Large single crystals of the highly purified compound were grown and ρ determined as a function of temperature T; K was measured over a range of both T and frequency. The activation energy for both ρ and K is found to be the same, 0.41 eV. The resistivity is non-Ohmic and the dielectric constant is quite large. We develop a model which explains the magnitude and temperature dependence of both the non-Ohmic conductivity and the dielectric constant in terms of charged barriers resulting from imperfections (including impurities) in the crystal. The presence of these barriers is verified semiquantitatively using nuclear and electron-spin resonance.

Original languageEnglish (US)
Pages (from-to)752-761
Number of pages10
JournalPhysical Review B
Volume23
Issue number2
DOIs
StatePublished - Jan 1 1981

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Permittivity
permittivity
Semiconductor materials
electrical resistivity
Semiconducting organic compounds
organic semiconductors
nuclear spin
Paramagnetic resonance
electron paramagnetic resonance
Activation energy
Single crystals
Impurities
activation energy
impurities
conductivity
Temperature
Defects
temperature dependence
Crystals
single crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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abstract = "Results of measurements of the resistivity ρ and the dielectric constant K of the one-dimensional organic semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide are described. Large single crystals of the highly purified compound were grown and ρ determined as a function of temperature T; K was measured over a range of both T and frequency. The activation energy for both ρ and K is found to be the same, 0.41 eV. The resistivity is non-Ohmic and the dielectric constant is quite large. We develop a model which explains the magnitude and temperature dependence of both the non-Ohmic conductivity and the dielectric constant in terms of charged barriers resulting from imperfections (including impurities) in the crystal. The presence of these barriers is verified semiquantitatively using nuclear and electron-spin resonance.",
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AU - Rowland, T. J.

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N2 - Results of measurements of the resistivity ρ and the dielectric constant K of the one-dimensional organic semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide are described. Large single crystals of the highly purified compound were grown and ρ determined as a function of temperature T; K was measured over a range of both T and frequency. The activation energy for both ρ and K is found to be the same, 0.41 eV. The resistivity is non-Ohmic and the dielectric constant is quite large. We develop a model which explains the magnitude and temperature dependence of both the non-Ohmic conductivity and the dielectric constant in terms of charged barriers resulting from imperfections (including impurities) in the crystal. The presence of these barriers is verified semiquantitatively using nuclear and electron-spin resonance.

AB - Results of measurements of the resistivity ρ and the dielectric constant K of the one-dimensional organic semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide are described. Large single crystals of the highly purified compound were grown and ρ determined as a function of temperature T; K was measured over a range of both T and frequency. The activation energy for both ρ and K is found to be the same, 0.41 eV. The resistivity is non-Ohmic and the dielectric constant is quite large. We develop a model which explains the magnitude and temperature dependence of both the non-Ohmic conductivity and the dielectric constant in terms of charged barriers resulting from imperfections (including impurities) in the crystal. The presence of these barriers is verified semiquantitatively using nuclear and electron-spin resonance.

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