Non-relief-pattern lithography patterning of solution processed organic semiconductors

Sung Kyu Park, Devin A. Mourey, Sankar Subramanian, John E. Anthony, Thomas Nelson Jackson

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Solution processed OTFTs (organic thin film transistors) and circuits with patterned active layers were fabricated using a non-relief-pattern, photoresist-free lithographic process. Nickel (Ni), deposited by ion-beam sputtering and patterned by lift-off, was used for the gate electrodes and silicon dioxide (SiO2) deposited by reactive ion-beam sputtering at 80°C was used as the gate dielectric and insulation layer for wiring crossovers. Prior to the OTS layer deposition, the substrates were cleaned using oxygen plasma. After OTS patterning, to improve the metal-organic contact and device performance, a self-assembled monolayer of pentafluorbenzethiol (PFTB) were formed on the Au source/drain electrodes. The result demonstrate that surface energy patterning of solution processed organic semiconductors with performance similar to unpatterned films is possible and may provide a path to low-cost electronics.

Original languageEnglish (US)
Pages (from-to)4145-4147
Number of pages3
JournalAdvanced Materials
Volume20
Issue number21
DOIs
StatePublished - Nov 3 2008

Fingerprint

Semiconducting organic compounds
Lithography
Ion beams
Sputtering
Thin film circuits
Electrodes
Gate dielectrics
Self assembled monolayers
Electric wiring
Photoresists
Thin film transistors
Nickel
Interfacial energy
Silicon Dioxide
Insulation
Electronic equipment
Metals
Silica
Oxygen
Plasmas

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, Sung Kyu ; Mourey, Devin A. ; Subramanian, Sankar ; Anthony, John E. ; Jackson, Thomas Nelson. / Non-relief-pattern lithography patterning of solution processed organic semiconductors. In: Advanced Materials. 2008 ; Vol. 20, No. 21. pp. 4145-4147.
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Non-relief-pattern lithography patterning of solution processed organic semiconductors. / Park, Sung Kyu; Mourey, Devin A.; Subramanian, Sankar; Anthony, John E.; Jackson, Thomas Nelson.

In: Advanced Materials, Vol. 20, No. 21, 03.11.2008, p. 4145-4147.

Research output: Contribution to journalArticle

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AU - Park, Sung Kyu

AU - Mourey, Devin A.

AU - Subramanian, Sankar

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AU - Jackson, Thomas Nelson

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AB - Solution processed OTFTs (organic thin film transistors) and circuits with patterned active layers were fabricated using a non-relief-pattern, photoresist-free lithographic process. Nickel (Ni), deposited by ion-beam sputtering and patterned by lift-off, was used for the gate electrodes and silicon dioxide (SiO2) deposited by reactive ion-beam sputtering at 80°C was used as the gate dielectric and insulation layer for wiring crossovers. Prior to the OTS layer deposition, the substrates were cleaned using oxygen plasma. After OTS patterning, to improve the metal-organic contact and device performance, a self-assembled monolayer of pentafluorbenzethiol (PFTB) were formed on the Au source/drain electrodes. The result demonstrate that surface energy patterning of solution processed organic semiconductors with performance similar to unpatterned films is possible and may provide a path to low-cost electronics.

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