Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling

Kenan Unlu, Mehmet Saglam, Bernard W. Wehring, Tim Z. Hossain, Elaine Custodio, John K. Lowell

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.

Original languageEnglish (US)
Pages575-578
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA
Duration: Jun 16 1996Jun 21 1996

Other

OtherProceedings of the 1996 11th International Conference on Ion Implantation Technology
CityAustin, TX, USA
Period6/16/966/21/96

Fingerprint

Depth profiling
Boron
Neutrons
Semiconductor materials
Semiconductor devices
Ion implantation
Chemical elements
Isotopes
Electric properties
Physical properties
Calibration
Ions

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Unlu, K., Saglam, M., Wehring, B. W., Hossain, T. Z., Custodio, E., & Lowell, J. K. (1996). Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling. 575-578. Paper presented at Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, .
Unlu, Kenan ; Saglam, Mehmet ; Wehring, Bernard W. ; Hossain, Tim Z. ; Custodio, Elaine ; Lowell, John K. / Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling. Paper presented at Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, .4 p.
@conference{063508a62e1f40528218bfd77934a849,
title = "Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling",
abstract = "The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.",
author = "Kenan Unlu and Mehmet Saglam and Wehring, {Bernard W.} and Hossain, {Tim Z.} and Elaine Custodio and Lowell, {John K.}",
year = "1996",
month = "12",
day = "1",
language = "English (US)",
pages = "575--578",
note = "Proceedings of the 1996 11th International Conference on Ion Implantation Technology ; Conference date: 16-06-1996 Through 21-06-1996",

}

Unlu, K, Saglam, M, Wehring, BW, Hossain, TZ, Custodio, E & Lowell, JK 1996, 'Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling', Paper presented at Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, 6/16/96 - 6/21/96 pp. 575-578.

Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling. / Unlu, Kenan; Saglam, Mehmet; Wehring, Bernard W.; Hossain, Tim Z.; Custodio, Elaine; Lowell, John K.

1996. 575-578 Paper presented at Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling

AU - Unlu, Kenan

AU - Saglam, Mehmet

AU - Wehring, Bernard W.

AU - Hossain, Tim Z.

AU - Custodio, Elaine

AU - Lowell, John K.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.

AB - The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.

UR - http://www.scopus.com/inward/record.url?scp=0030351102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030351102&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030351102

SP - 575

EP - 578

ER -

Unlu K, Saglam M, Wehring BW, Hossain TZ, Custodio E, Lowell JK. Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling. 1996. Paper presented at Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, .