Noninvasive nature of corona charging on thermal Si/SiO 2 structures

M. S. Dautrich, P. M. Lenahan, A. Y. Kang, J. F. Conley

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

Original languageEnglish (US)
Pages (from-to)1844-1845
Number of pages2
JournalApplied Physics Letters
Volume85
Issue number10
DOIs
StatePublished - Sep 6 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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