The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)