Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Tingting Jia; Shengming Zhou; Hao Teng; Hui Lin; Xiaorui Hou; Yukun Li; Wenjie Li; Jun Wang; Jianqi Liu; Jun Huang; Kai Huang; Min Zhang; Jianfeng Wang; Ke Xu

doi:10.1016/j.jcrysgro.2010.10.028

Nonpolar a-plane GaN films grown on γ-LiAlO₂ (3 0 2) substrates by low-pressure MOCVD

Tingting Jia, Shengming Zhou, Hao Teng, Hui Lin, Xiaorui Hou, Yukun Li, Wenjie Li, Jun Wang, Jianqi Liu, Jun Huang, Kai Huang, Min Zhang, Jianfeng Wang, Ke Xu

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

A-plane gallium nitride (GaN) layers were grown on γ-LiAlO ₂ (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.

Original language	English (US)
Pages (from-to)	483-487
Number of pages	5
Journal	Journal of Crystal Growth
Volume	318
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.028
State	Published - Mar 1 2011

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.10.028

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@article{ad6fcf63ee52427c8afde2b071affa8a,

title = "Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD",

abstract = "A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.",

author = "Tingting Jia and Shengming Zhou and Hao Teng and Hui Lin and Xiaorui Hou and Yukun Li and Wenjie Li and Jun Wang and Jianqi Liu and Jun Huang and Kai Huang and Min Zhang and Jianfeng Wang and Ke Xu",

note = "Funding Information: This work was supported by the National Natural Science Foundation ( 60776003 ) and the Project of High Technology Research and Development of China ( 2006AA03A101 ) of China.",

year = "2011",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2010.10.028",

language = "English (US)",

volume = "318",

pages = "483--487",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

AU - Jia, Tingting

AU - Zhou, Shengming

AU - Teng, Hao

AU - Lin, Hui

AU - Hou, Xiaorui

AU - Li, Yukun

AU - Li, Wenjie

AU - Wang, Jun

AU - Liu, Jianqi

AU - Huang, Jun

AU - Huang, Kai

AU - Zhang, Min

AU - Wang, Jianfeng

AU - Xu, Ke

N1 - Funding Information: This work was supported by the National Natural Science Foundation ( 60776003 ) and the Project of High Technology Research and Development of China ( 2006AA03A101 ) of China.

PY - 2011/3/1

Y1 - 2011/3/1

N2 - A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.

AB - A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.

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U2 - 10.1016/j.jcrysgro.2010.10.028

DO - 10.1016/j.jcrysgro.2010.10.028

M3 - Article

AN - SCOPUS:79952737637

SN - 0022-0248

VL - 318

SP - 483

EP - 487

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Nonpolar a-plane GaN films grown on γ-LiAlO₂ (3 0 2) substrates by low-pressure MOCVD

Abstract

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