Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Tingting Jia, Shengming Zhou, Hao Teng, Hui Lin, Xiaorui Hou, Yukun Li, Wenjie Li, Jun Wang, Jianqi Liu, Jun Huang, Kai Huang, Min Zhang, Jianfeng Wang, Ke Xu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.

Original languageEnglish (US)
Pages (from-to)483-487
Number of pages5
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
StatePublished - Mar 1 2011

Fingerprint

Low pressure chemical vapor deposition
Gallium nitride
gallium nitrides
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
low pressure
Structural properties
Substrates
crystallinity
Optical properties
Polarization
optical properties
X ray diffraction
high resolution
polarization
diffraction
gallium nitride
x rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Jia, Tingting ; Zhou, Shengming ; Teng, Hao ; Lin, Hui ; Hou, Xiaorui ; Li, Yukun ; Li, Wenjie ; Wang, Jun ; Liu, Jianqi ; Huang, Jun ; Huang, Kai ; Zhang, Min ; Wang, Jianfeng ; Xu, Ke. / Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD. In: Journal of Crystal Growth. 2011 ; Vol. 318, No. 1. pp. 483-487.
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abstract = "A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13{\%}) was higher than sample B (54.65{\%}), due to the improved crystallinity.",
author = "Tingting Jia and Shengming Zhou and Hao Teng and Hui Lin and Xiaorui Hou and Yukun Li and Wenjie Li and Jun Wang and Jianqi Liu and Jun Huang and Kai Huang and Min Zhang and Jianfeng Wang and Ke Xu",
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Jia, T, Zhou, S, Teng, H, Lin, H, Hou, X, Li, Y, Li, W, Wang, J, Liu, J, Huang, J, Huang, K, Zhang, M, Wang, J & Xu, K 2011, 'Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD', Journal of Crystal Growth, vol. 318, no. 1, pp. 483-487. https://doi.org/10.1016/j.jcrysgro.2010.10.028

Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD. / Jia, Tingting; Zhou, Shengming; Teng, Hao; Lin, Hui; Hou, Xiaorui; Li, Yukun; Li, Wenjie; Wang, Jun; Liu, Jianqi; Huang, Jun; Huang, Kai; Zhang, Min; Wang, Jianfeng; Xu, Ke.

In: Journal of Crystal Growth, Vol. 318, No. 1, 01.03.2011, p. 483-487.

Research output: Contribution to journalArticle

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T1 - Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

AU - Jia, Tingting

AU - Zhou, Shengming

AU - Teng, Hao

AU - Lin, Hui

AU - Hou, Xiaorui

AU - Li, Yukun

AU - Li, Wenjie

AU - Wang, Jun

AU - Liu, Jianqi

AU - Huang, Jun

AU - Huang, Kai

AU - Zhang, Min

AU - Wang, Jianfeng

AU - Xu, Ke

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AB - A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.

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