Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Tingting Jia, Shengming Zhou, Hao Teng, Hui Lin, Xiaorui Hou, Yukun Li, Wenjie Li, Jun Wang, Jianqi Liu, Jun Huang, Kai Huang, Min Zhang, Jianfeng Wang, Ke Xu

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Abstract

A-plane gallium nitride (GaN) layers were grown on γ-LiAlO 2 (3 0 2) by metalorganic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.

Original languageEnglish (US)
Pages (from-to)483-487
Number of pages5
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
StatePublished - Mar 1 2011

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Jia, T., Zhou, S., Teng, H., Lin, H., Hou, X., Li, Y., Li, W., Wang, J., Liu, J., Huang, J., Huang, K., Zhang, M., Wang, J., & Xu, K. (2011). Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD. Journal of Crystal Growth, 318(1), 483-487. https://doi.org/10.1016/j.jcrysgro.2010.10.028