Nonradiative energy transfer between colloidal quantum-dot (QD) phosphors and the active region of an indirect-bandgap semiconductor diode was investigated. A silicon carbide (SiC) p-n junction was fabricated and surface-patterned with arrays of holes, facilitating the sidewall coupling between the QDs and the SiC p-n junction. Nonradiative energy transfer was observed from the SiC diode to the colloidal QD phosphors, which was characterized with a color conversion efficiency of 3.1%. Time-resolved photoluminescence measurements were conducted to verify and characterize the energy transfer process between the diode and QDs. The carrier recombination lifetime of SiC was found to decrease upon the presence of QD phosphors, which provides further evidence for the presence of the nonradiative energy transfer path between the QDs and the SiC diode.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry