Nonvolatile resistive switching characteristics of HfO2 with Cu doping

Weihua Guan, Shibing Long, Ming Liu, Wei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is less than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Materials Science and Technology for Nonvolatile Memories
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781605110417
StatePublished - 2008
EventMaterials Science and Technology for Nonvolatile Memories - San Francisco, CA, United States
Duration: Mar 24 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherMaterials Science and Technology for Nonvolatile Memories
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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