Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

Weihua Guan; Shibing Long; Rui Jia; Ming Liu

doi:10.1063/1.2760156

Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

Weihua Guan, Shibing Long, Rui Jia, Ming Liu

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

183 Scopus citations

Abstract

Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.

Original language	English (US)
Article number	062111
Journal	Applied Physics Letters
Volume	91
Issue number	6
DOIs	https://doi.org/10.1063/1.2760156
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2760156

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title = "Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide",

abstract = "Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.",

author = "Weihua Guan and Shibing Long and Rui Jia and Ming Liu",

note = "Funding Information: The authors would like to thank J. Wang (Xi{\textquoteright}an Jiao Tong University) for XRD analysis and L. Zhen for sample preparation. This work is partly supported by National Basic Research Program of China (973 Program) under Grant No. 2006CB302706 and National Natural Science Foundation of China under Grant Nos. 90607022, 90401002, and 60506005.",

year = "2007",

doi = "10.1063/1.2760156",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

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TY - JOUR

T1 - Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

AU - Guan, Weihua

AU - Long, Shibing

AU - Jia, Rui

AU - Liu, Ming

N1 - Funding Information: The authors would like to thank J. Wang (Xi’an Jiao Tong University) for XRD analysis and L. Zhen for sample preparation. This work is partly supported by National Basic Research Program of China (973 Program) under Grant No. 2006CB302706 and National Natural Science Foundation of China under Grant Nos. 90607022, 90401002, and 60506005.

PY - 2007

Y1 - 2007

N2 - Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.

AB - Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.

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SN - 0003-6951

IS - 6

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ER -

Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

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