Abstract
Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.
| Original language | English (US) |
|---|---|
| Article number | 062111 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 6 |
| DOIs | |
| State | Published - Aug 17 2007 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. / Guan, Weihua; Long, Shibing; Jia, Rui; Liu, Ming.
In: Applied Physics Letters, Vol. 91, No. 6, 062111, 17.08.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
AU - Guan, Weihua
AU - Long, Shibing
AU - Jia, Rui
AU - Liu, Ming
PY - 2007/8/17
Y1 - 2007/8/17
N2 - Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.
AB - Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.
UR - http://www.scopus.com/inward/record.url?scp=34547842595&partnerID=8YFLogxK
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U2 - 10.1063/1.2760156
DO - 10.1063/1.2760156
M3 - Article
AN - SCOPUS:34547842595
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062111
ER -