Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

Weihua Guan, Shibing Long, Rui Jia, Ming Liu

Research output: Contribution to journalArticle

177 Scopus citations

Abstract

Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.

Original languageEnglish (US)
Article number062111
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
StatePublished - Aug 17 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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