Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

Rongming Chu, David Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, Scott Newell, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Pages237-239
Number of pages3
DOIs
StatePublished - Aug 8 2012
Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium
Duration: Jun 3 2012Jun 7 2012

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
CountryBelgium
CityBruges
Period6/3/126/7/12

Fingerprint

MISFET devices
Threshold voltage
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chu, R., Brown, D., Zehnder, D., Chen, X., Williams, A., Li, R., ... Boutros, K. (2012). Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 237-239). [6229067] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229067
Chu, Rongming ; Brown, David ; Zehnder, Daniel ; Chen, Xu ; Williams, Adam ; Li, Ray ; Chen, Mary ; Newell, Scott ; Boutros, Karim. / Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. 2012. pp. 237-239 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).
@inproceedings{eaf9d9d0332945d1b42eec9a9c68ac60,
title = "Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C",
abstract = "We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.",
author = "Rongming Chu and David Brown and Daniel Zehnder and Xu Chen and Adam Williams and Ray Li and Mary Chen and Scott Newell and Karim Boutros",
year = "2012",
month = "8",
day = "8",
doi = "10.1109/ISPSD.2012.6229067",
language = "English (US)",
isbn = "9781457715952",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
pages = "237--239",
booktitle = "Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12",

}

Chu, R, Brown, D, Zehnder, D, Chen, X, Williams, A, Li, R, Chen, M, Newell, S & Boutros, K 2012, Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. in Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12., 6229067, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 237-239, 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12, Bruges, Belgium, 6/3/12. https://doi.org/10.1109/ISPSD.2012.6229067

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. / Chu, Rongming; Brown, David; Zehnder, Daniel; Chen, Xu; Williams, Adam; Li, Ray; Chen, Mary; Newell, Scott; Boutros, Karim.

Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. 2012. p. 237-239 6229067 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

AU - Chu, Rongming

AU - Brown, David

AU - Zehnder, Daniel

AU - Chen, Xu

AU - Williams, Adam

AU - Li, Ray

AU - Chen, Mary

AU - Newell, Scott

AU - Boutros, Karim

PY - 2012/8/8

Y1 - 2012/8/8

N2 - We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

AB - We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84864767848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864767848&partnerID=8YFLogxK

U2 - 10.1109/ISPSD.2012.6229067

DO - 10.1109/ISPSD.2012.6229067

M3 - Conference contribution

AN - SCOPUS:84864767848

SN - 9781457715952

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 237

EP - 239

BT - Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12

ER -

Chu R, Brown D, Zehnder D, Chen X, Williams A, Li R et al. Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. 2012. p. 237-239. 6229067. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229067