Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

Rongming Chu, David Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, Scott Newell, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Scopus citations

Abstract

We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Pages237-239
Number of pages3
DOIs
StatePublished - Aug 8 2012
Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium
Duration: Jun 3 2012Jun 7 2012

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
CountryBelgium
CityBruges
Period6/3/126/7/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chu, R., Brown, D., Zehnder, D., Chen, X., Williams, A., Li, R., Chen, M., Newell, S., & Boutros, K. (2012). Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 237-239). [6229067] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229067