Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot

Brian Hughes, James Lazar, Stephen Hulsey, Marcel Musni, Daniel Zehnder, Austin Garrido, Raghav Khanna, Rongming Chu, Sameh Khalil, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is reduced to 1nH using bare MOSFET die for driving the GaN gates and a 0.5mil flexible substrate gate transmission-line. Configured as a boost converter with no added gate resistance, the synchronous half-bridge switches 400V in only 1.3ns. The high voltage slew rates of 325V/ns results in overshoot of 200V on the drain and 4V overshoot on the gate, both of which may damage the GaN switches. Critically damping the gate turn-on reduces overshoot to safe levels of 1V gate overshoot and ∼20V drain overshoot. The gate damping increases drain fall time to 3ns, which only decreases efficiency by 0.2% at 1MHz. The resulting synchronous boost converter has an efficiency of 96%, switching 300V at 1MHz with 50% duty cycle and an output power of 2.4kW. The high efficiency of GaN switches and the 0.6C/W thermal resistance of the MCM enable a maximum junction temperature of 65°C.

Original languageEnglish (US)
Title of host publicationAPEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages484-487
Number of pages4
ISBN (Print)9781479923250
DOIs
StatePublished - Jan 1 2014
Event29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014 - Fort Worth, TX, United States
Duration: Mar 16 2014Mar 20 2014

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014
CountryUnited States
CityFort Worth, TX
Period3/16/143/20/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot'. Together they form a unique fingerprint.

  • Cite this

    Hughes, B., Lazar, J., Hulsey, S., Musni, M., Zehnder, D., Garrido, A., Khanna, R., Chu, R., Khalil, S., & Boutros, K. (2014). Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot. In APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition (pp. 484-487). [6803352] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2014.6803352