Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot

Brian Hughes, James Lazar, Stephen Hulsey, Marcel Musni, Daniel Zehnder, Austin Garrido, Raghav Khanna, Rongming Chu, Sameh Khalil, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is reduced to 1nH using bare MOSFET die for driving the GaN gates and a 0.5mil flexible substrate gate transmission-line. Configured as a boost converter with no added gate resistance, the synchronous half-bridge switches 400V in only 1.3ns. The high voltage slew rates of 325V/ns results in overshoot of 200V on the drain and 4V overshoot on the gate, both of which may damage the GaN switches. Critically damping the gate turn-on reduces overshoot to safe levels of 1V gate overshoot and ∼20V drain overshoot. The gate damping increases drain fall time to 3ns, which only decreases efficiency by 0.2% at 1MHz. The resulting synchronous boost converter has an efficiency of 96%, switching 300V at 1MHz with 50% duty cycle and an output power of 2.4kW. The high efficiency of GaN switches and the 0.6C/W thermal resistance of the MCM enable a maximum junction temperature of 65°C.

Original languageEnglish (US)
Title of host publicationAPEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages484-487
Number of pages4
ISBN (Print)9781479923250
DOIs
StatePublished - Jan 1 2014
Event29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014 - Fort Worth, TX, United States
Duration: Mar 16 2014Mar 20 2014

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014
CountryUnited States
CityFort Worth, TX
Period3/16/143/20/14

Fingerprint

Inductance
Damping
Switches
Electric lines
Heat resistance
Networks (circuits)
Electric potential
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Hughes, B., Lazar, J., Hulsey, S., Musni, M., Zehnder, D., Garrido, A., ... Boutros, K. (2014). Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot. In APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition (pp. 484-487). [6803352] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2014.6803352
Hughes, Brian ; Lazar, James ; Hulsey, Stephen ; Musni, Marcel ; Zehnder, Daniel ; Garrido, Austin ; Khanna, Raghav ; Chu, Rongming ; Khalil, Sameh ; Boutros, Karim. / Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot. APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 484-487 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).
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title = "Normally-off GaN-on-Si multi-chip module boost converter with 96{\%} efficiency and low gate and drain overshoot",
abstract = "A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is reduced to 1nH using bare MOSFET die for driving the GaN gates and a 0.5mil flexible substrate gate transmission-line. Configured as a boost converter with no added gate resistance, the synchronous half-bridge switches 400V in only 1.3ns. The high voltage slew rates of 325V/ns results in overshoot of 200V on the drain and 4V overshoot on the gate, both of which may damage the GaN switches. Critically damping the gate turn-on reduces overshoot to safe levels of 1V gate overshoot and ∼20V drain overshoot. The gate damping increases drain fall time to 3ns, which only decreases efficiency by 0.2{\%} at 1MHz. The resulting synchronous boost converter has an efficiency of 96{\%}, switching 300V at 1MHz with 50{\%} duty cycle and an output power of 2.4kW. The high efficiency of GaN switches and the 0.6C/W thermal resistance of the MCM enable a maximum junction temperature of 65°C.",
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Hughes, B, Lazar, J, Hulsey, S, Musni, M, Zehnder, D, Garrido, A, Khanna, R, Chu, R, Khalil, S & Boutros, K 2014, Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot. in APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition., 6803352, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Institute of Electrical and Electronics Engineers Inc., pp. 484-487, 29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014, Fort Worth, TX, United States, 3/16/14. https://doi.org/10.1109/APEC.2014.6803352

Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot. / Hughes, Brian; Lazar, James; Hulsey, Stephen; Musni, Marcel; Zehnder, Daniel; Garrido, Austin; Khanna, Raghav; Chu, Rongming; Khalil, Sameh; Boutros, Karim.

APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2014. p. 484-487 6803352 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Hughes, Brian

AU - Lazar, James

AU - Hulsey, Stephen

AU - Musni, Marcel

AU - Zehnder, Daniel

AU - Garrido, Austin

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AU - Khalil, Sameh

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N2 - A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is reduced to 1nH using bare MOSFET die for driving the GaN gates and a 0.5mil flexible substrate gate transmission-line. Configured as a boost converter with no added gate resistance, the synchronous half-bridge switches 400V in only 1.3ns. The high voltage slew rates of 325V/ns results in overshoot of 200V on the drain and 4V overshoot on the gate, both of which may damage the GaN switches. Critically damping the gate turn-on reduces overshoot to safe levels of 1V gate overshoot and ∼20V drain overshoot. The gate damping increases drain fall time to 3ns, which only decreases efficiency by 0.2% at 1MHz. The resulting synchronous boost converter has an efficiency of 96%, switching 300V at 1MHz with 50% duty cycle and an output power of 2.4kW. The high efficiency of GaN switches and the 0.6C/W thermal resistance of the MCM enable a maximum junction temperature of 65°C.

AB - A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is reduced to 1nH using bare MOSFET die for driving the GaN gates and a 0.5mil flexible substrate gate transmission-line. Configured as a boost converter with no added gate resistance, the synchronous half-bridge switches 400V in only 1.3ns. The high voltage slew rates of 325V/ns results in overshoot of 200V on the drain and 4V overshoot on the gate, both of which may damage the GaN switches. Critically damping the gate turn-on reduces overshoot to safe levels of 1V gate overshoot and ∼20V drain overshoot. The gate damping increases drain fall time to 3ns, which only decreases efficiency by 0.2% at 1MHz. The resulting synchronous boost converter has an efficiency of 96%, switching 300V at 1MHz with 50% duty cycle and an output power of 2.4kW. The high efficiency of GaN switches and the 0.6C/W thermal resistance of the MCM enable a maximum junction temperature of 65°C.

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Hughes B, Lazar J, Hulsey S, Musni M, Zehnder D, Garrido A et al. Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot. In APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2014. p. 484-487. 6803352. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2014.6803352