Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

Rongming Chu, Brian Hughes, Mary Chen, David Brown, Ray Li, Sameh Khalil, Daniel Zehnder, Steve Chen, Adam Williams, Austin Garrido, Marcel Musni, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)
Original languageEnglish (US)
Title of host publication71st Device Research Conference, DRC 2013 - Conference Digest
Pages199-200
Number of pages2
DOIs
StatePublished - Dec 16 2013
Event71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States
Duration: Jun 23 2013Jun 26 2013

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other71st Device Research Conference, DRC 2013
CountryUnited States
CityNotre Dame, IN
Period6/23/136/26/13

Fingerprint

Transistors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chu, R., Hughes, B., Chen, M., Brown, D., Li, R., Khalil, S., ... Boutros, K. (2013). Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. In 71st Device Research Conference, DRC 2013 - Conference Digest (pp. 199-200). [6633862] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2013.6633862
Chu, Rongming ; Hughes, Brian ; Chen, Mary ; Brown, David ; Li, Ray ; Khalil, Sameh ; Zehnder, Daniel ; Chen, Steve ; Williams, Adam ; Garrido, Austin ; Musni, Marcel ; Boutros, Karim. / Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. 71st Device Research Conference, DRC 2013 - Conference Digest. 2013. pp. 199-200 (Device Research Conference - Conference Digest, DRC).
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Chu, R, Hughes, B, Chen, M, Brown, D, Li, R, Khalil, S, Zehnder, D, Chen, S, Williams, A, Garrido, A, Musni, M & Boutros, K 2013, Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. in 71st Device Research Conference, DRC 2013 - Conference Digest., 6633862, Device Research Conference - Conference Digest, DRC, pp. 199-200, 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 6/23/13. https://doi.org/10.1109/DRC.2013.6633862

Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. / Chu, Rongming; Hughes, Brian; Chen, Mary; Brown, David; Li, Ray; Khalil, Sameh; Zehnder, Daniel; Chen, Steve; Williams, Adam; Garrido, Austin; Musni, Marcel; Boutros, Karim.

71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 199-200 6633862 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chu R, Hughes B, Chen M, Brown D, Li R, Khalil S et al. Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt. In 71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 199-200. 6633862. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2013.6633862