NOVEL SUBMICRON FABRICATION TECHNIQUE.

Thomas Nelson Jackson, N. A. Masnari

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Abstract

This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

Original languageEnglish (US)
Pages58-61
Number of pages4
StatePublished - Jan 1 1979
EventInt Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA
Duration: Dec 3 1979Dec 5 1979

Other

OtherInt Electron Devices Meet, 25th, Tech Dig
CityWashington, DC, USA
Period12/3/7912/5/79

Fingerprint

Fabrication
Microwave devices
Chromium
Linewidth
Ions
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Jackson, T. N., & Masnari, N. A. (1979). NOVEL SUBMICRON FABRICATION TECHNIQUE.. 58-61. Paper presented at Int Electron Devices Meet, 25th, Tech Dig, Washington, DC, USA, .
Jackson, Thomas Nelson ; Masnari, N. A. / NOVEL SUBMICRON FABRICATION TECHNIQUE. Paper presented at Int Electron Devices Meet, 25th, Tech Dig, Washington, DC, USA, .4 p.
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abstract = "This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.",
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Jackson, TN & Masnari, NA 1979, 'NOVEL SUBMICRON FABRICATION TECHNIQUE.', Paper presented at Int Electron Devices Meet, 25th, Tech Dig, Washington, DC, USA, 12/3/79 - 12/5/79 pp. 58-61.

NOVEL SUBMICRON FABRICATION TECHNIQUE. / Jackson, Thomas Nelson; Masnari, N. A.

1979. 58-61 Paper presented at Int Electron Devices Meet, 25th, Tech Dig, Washington, DC, USA, .

Research output: Contribution to conferencePaper

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N2 - This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

AB - This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with goldplated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAS with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, available gains of over 10 dB at a frequency of 12 GHz.

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Jackson TN, Masnari NA. NOVEL SUBMICRON FABRICATION TECHNIQUE.. 1979. Paper presented at Int Electron Devices Meet, 25th, Tech Dig, Washington, DC, USA, .