NOVEL SUBMICRON FABRICATION TECHNIQUE.

Thomas Nelson Jackson, Nino A. Masnari

Research output: Contribution to journalArticle

Abstract

The fabrication technique described uses conventional photolithography and selective edge plating, in which a metal line is plated to the edge of a conventionally patterned metal layer. The plated edge is then used as a mask for subsequent plasma etching of underlying conductors of dielectrics. This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with gold-plated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAs with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, and 250 mu m gate widths have exhibited maximum available gains of over 10 db at a frequency of 12 GHz.

Original languageEnglish (US)
JournalSemiconductor International
Volume3
Issue number3
StatePublished - Jan 1 1980

Fingerprint

Fabrication
Microwave devices
fabrication
field effect transistors
Plasma etching
Photolithography
Metals
Plating
Linewidth
Masks
Chromium
Equipment and Supplies
Gold
Microwaves
Ions
plasma etching
photolithography
plating
metals
chromium

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Microbiology
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The fabrication technique described uses conventional photolithography and selective edge plating, in which a metal line is plated to the edge of a conventionally patterned metal layer. The plated edge is then used as a mask for subsequent plasma etching of underlying conductors of dielectrics. This technique has produced linewidths as small as 0. 04 mu m and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with gold-plated chromium gates as short as 0. 1 mu m. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAs with 5 mu m source-drain spacings, 0. 3 mu m gate lengths, and 250 mu m gate widths have exhibited maximum available gains of over 10 db at a frequency of 12 GHz.",
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NOVEL SUBMICRON FABRICATION TECHNIQUE. / Jackson, Thomas Nelson; Masnari, Nino A.

In: Semiconductor International, Vol. 3, No. 3, 01.01.1980.

Research output: Contribution to journalArticle

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