TY - JOUR
T1 - Novel wetting behavior in quantum films
AU - Cheng, E.
AU - Cole, M. W.
AU - Dupont-Roc, J.
AU - Saam, W. F.
AU - Treiner, J.
PY - 1993
Y1 - 1993
N2 - Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.
AB - Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.
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U2 - 10.1103/RevModPhys.65.557
DO - 10.1103/RevModPhys.65.557
M3 - Article
AN - SCOPUS:21144478592
VL - 65
SP - 557
EP - 567
JO - Reviews of Modern Physics
JF - Reviews of Modern Physics
SN - 0034-6861
IS - 2
ER -