Abstract
Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 557-567 |
| Number of pages | 11 |
| Journal | Reviews of Modern Physics |
| Volume | 65 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 1 1993 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Novel wetting behavior in quantum films. / Cheng, E.; Cole, Milton Walter; Dupont-Roc, J.; Saam, W. F.; Treiner, J.
In: Reviews of Modern Physics, Vol. 65, No. 2, 01.01.1993, p. 557-567.Research output: Contribution to journal › Article
TY - JOUR
T1 - Novel wetting behavior in quantum films
AU - Cheng, E.
AU - Cole, Milton Walter
AU - Dupont-Roc, J.
AU - Saam, W. F.
AU - Treiner, J.
PY - 1993/1/1
Y1 - 1993/1/1
N2 - Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.
AB - Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.
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U2 - 10.1103/RevModPhys.65.557
DO - 10.1103/RevModPhys.65.557
M3 - Article
VL - 65
SP - 557
EP - 567
JO - Reviews of Modern Physics
JF - Reviews of Modern Physics
SN - 0034-6861
IS - 2
ER -