Novel wetting behavior in quantum films

E. Cheng, Milton Walter Cole, J. Dupont-Roc, W. F. Saam, J. Treiner

Research output: Contribution to journalArticle

130 Citations (Scopus)

Abstract

Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.

Original languageEnglish (US)
Pages (from-to)557-567
Number of pages11
JournalReviews of Modern Physics
Volume65
Issue number2
DOIs
StatePublished - Jan 1 1993

Fingerprint

wetting
atomic interactions
transition pressure
vapor pressure
electron scattering
film thickness
vapors
saturation
physics
temperature
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Cheng, E., Cole, M. W., Dupont-Roc, J., Saam, W. F., & Treiner, J. (1993). Novel wetting behavior in quantum films. Reviews of Modern Physics, 65(2), 557-567. https://doi.org/10.1103/RevModPhys.65.557
Cheng, E. ; Cole, Milton Walter ; Dupont-Roc, J. ; Saam, W. F. ; Treiner, J. / Novel wetting behavior in quantum films. In: Reviews of Modern Physics. 1993 ; Vol. 65, No. 2. pp. 557-567.
@article{de7d17fbdf3d4a23a450adb881fefd97,
title = "Novel wetting behavior in quantum films",
abstract = "Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.",
author = "E. Cheng and Cole, {Milton Walter} and J. Dupont-Roc and Saam, {W. F.} and J. Treiner",
year = "1993",
month = "1",
day = "1",
doi = "10.1103/RevModPhys.65.557",
language = "English (US)",
volume = "65",
pages = "557--567",
journal = "Reviews of Modern Physics",
issn = "0034-6861",
publisher = "American Physical Society",
number = "2",

}

Cheng, E, Cole, MW, Dupont-Roc, J, Saam, WF & Treiner, J 1993, 'Novel wetting behavior in quantum films', Reviews of Modern Physics, vol. 65, no. 2, pp. 557-567. https://doi.org/10.1103/RevModPhys.65.557

Novel wetting behavior in quantum films. / Cheng, E.; Cole, Milton Walter; Dupont-Roc, J.; Saam, W. F.; Treiner, J.

In: Reviews of Modern Physics, Vol. 65, No. 2, 01.01.1993, p. 557-567.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Novel wetting behavior in quantum films

AU - Cheng, E.

AU - Cole, Milton Walter

AU - Dupont-Roc, J.

AU - Saam, W. F.

AU - Treiner, J.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.

AB - Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He4 vapor. For temperature T below the wetting temperature (Twf2 K), He4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T (TwTTcf2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure Ppw(T). For P>Ppw, and for all P if T>Tc, the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.

UR - http://www.scopus.com/inward/record.url?scp=21144478592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21144478592&partnerID=8YFLogxK

U2 - 10.1103/RevModPhys.65.557

DO - 10.1103/RevModPhys.65.557

M3 - Article

VL - 65

SP - 557

EP - 567

JO - Reviews of Modern Physics

JF - Reviews of Modern Physics

SN - 0034-6861

IS - 2

ER -

Cheng E, Cole MW, Dupont-Roc J, Saam WF, Treiner J. Novel wetting behavior in quantum films. Reviews of Modern Physics. 1993 Jan 1;65(2):557-567. https://doi.org/10.1103/RevModPhys.65.557