Abstract
Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.
| Original language | English (US) |
|---|---|
| Journal | Materials Science Forum |
| Volume | 338 |
| State | Published - Jan 1 2000 |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Nucleation of dislocations during physical vapor transport growth of silicon carbide. / Sanchez, E. K.; Heydemann, V. D.; Snyder, David W.; Rohrer, G. S.; Skowronski, M.
In: Materials Science Forum, Vol. 338, 01.01.2000.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Nucleation of dislocations during physical vapor transport growth of silicon carbide
AU - Sanchez, E. K.
AU - Heydemann, V. D.
AU - Snyder, David W.
AU - Rohrer, G. S.
AU - Skowronski, M.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.
AB - Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.
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M3 - Conference article
AN - SCOPUS:0033722875
VL - 338
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
ER -