Nucleation of dislocations during physical vapor transport growth of silicon carbide

E. K. Sanchez, V. D. Heydemann, David W. Snyder, G. S. Rohrer, M. Skowronski

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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