Nucleation of dislocations during physical vapor transport growth of silicon carbide

E. K. Sanchez, V. D. Heydemann, David W. Snyder, G. S. Rohrer, M. Skowronski

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Edge dislocations
Screw dislocations
Silicon carbide
silicon carbides
Seed
Nucleation
screw dislocations
Vapors
edge dislocations
nucleation
vapors
seeds
Polishing
Hydrogen
Carbon
polishing
Crystals
inclusions
damage
carbon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sanchez, E. K., Heydemann, V. D., Snyder, D. W., Rohrer, G. S., & Skowronski, M. (2000). Nucleation of dislocations during physical vapor transport growth of silicon carbide. Materials Science Forum, 338.
Sanchez, E. K. ; Heydemann, V. D. ; Snyder, David W. ; Rohrer, G. S. ; Skowronski, M. / Nucleation of dislocations during physical vapor transport growth of silicon carbide. In: Materials Science Forum. 2000 ; Vol. 338.
@article{5448853d5aac4931bf207a354793c89b,
title = "Nucleation of dislocations during physical vapor transport growth of silicon carbide",
abstract = "Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.",
author = "Sanchez, {E. K.} and Heydemann, {V. D.} and Snyder, {David W.} and Rohrer, {G. S.} and M. Skowronski",
year = "2000",
month = "1",
day = "1",
language = "English (US)",
volume = "338",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

Nucleation of dislocations during physical vapor transport growth of silicon carbide. / Sanchez, E. K.; Heydemann, V. D.; Snyder, David W.; Rohrer, G. S.; Skowronski, M.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Nucleation of dislocations during physical vapor transport growth of silicon carbide

AU - Sanchez, E. K.

AU - Heydemann, V. D.

AU - Snyder, David W.

AU - Rohrer, G. S.

AU - Skowronski, M.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.

AB - Two possible nucleation mechanisms for threading edge and screw dislocations during the physical vapor transport growth of SiC have been investigated. First, growth over intentionally deposited carbon inclusions led to an edge and screw dislocation density orders of magnitude higher than the surrounding crystal. Second, seeds with mechanical polishing damage have been shown to lead to a dislocation density nearly three orders of magnitude higher than seeds that were hydrogen etched. A new linear step source has been observed and correlated with an increase in the dislocation density.

UR - http://www.scopus.com/inward/record.url?scp=0033722875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033722875&partnerID=8YFLogxK

M3 - Conference article

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -