Observation and electronic characterization of "new" E′ center defects in technologically relevant thermal SiO₂ on Si: An additional complexity in oxide charge trapping

Physics & Astronomy

• absorption cross sections 92%
• capacitance 14%
• characterization 72%
• defects 71%
• electric potential 9%
• electrical measurement 17%
• electron paramagnetic resonance 33%
• electronics 67%
• electrons 15%
• field effect transistors 14%
• fluence 15%
• injection 27%
• line shape 35%
• metal oxide semiconductors 18%
• oxides 80%
• room temperature 10%
• roots of equations 49%
• thin films 9%
• trapping 100%