Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si

John F. Conley, Patrick M. Lenahan, H. L. Evans, R. K. Lowry, T. J. Morthorst

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We demonstrate that at least two varieties of E' defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E'γp. We find that EP defect capture cross sections exceed the corresponding E 'γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E 'γp defects, and that the EP resonance, unlike the E'γp resonance is not stable at room temperature.

Original languageEnglish (US)
Pages (from-to)2281-2283
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number18
DOIs
StatePublished - Dec 1 1994

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traps
defects
electronics
absorption cross sections
oxides
room temperature
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Conley, John F. ; Lenahan, Patrick M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J. / Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si. In: Applied Physics Letters. 1994 ; Vol. 65, No. 18. pp. 2281-2283.
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Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si. / Conley, John F.; Lenahan, Patrick M.; Evans, H. L.; Lowry, R. K.; Morthorst, T. J.

In: Applied Physics Letters, Vol. 65, No. 18, 01.12.1994, p. 2281-2283.

Research output: Contribution to journalArticle

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