We demonstrate that at least two varieties of E' defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E'γp. We find that EP defect capture cross sections exceed the corresponding E 'γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E 'γp defects, and that the EP resonance, unlike the E'γp resonance is not stable at room temperature.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1994|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)