Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors

David J. Meyer, Morgen S. Dautrich, Patrick M. Lenahan, Aivars Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group's earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages593-596
Number of pages4
StatePublished - Dec 1 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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