Observation of deep-level centers in 4H-silicon carbide metal oxide semiconductor field effect transistors by spin dependent recombination

Morgen S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC metal oxide semiconductor field effect transistors with thermally grown SiO2 gate stacks. We demonstrate a distribution of performance-limiting defects which extends beyond the SiC/SiO2 boundary into the SiC bulk. Our results strongly indicate that the defects are intrinsic and we tentatively identify them as silicon vacancy-like centers on the basis of strong, but imprecisely-resolved, 29Si hyperfine sidepeaks in the magnetic resonance spectrum.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
PublisherTrans Tech Publications Ltd
Pages1011-1014
Number of pages4
EditionPART 2
ISBN (Print)9780878494255
DOIs
StatePublished - Jan 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Dautrich, M. S., Lenahan, P. M., & Lelis, A. J. (2006). Observation of deep-level centers in 4H-silicon carbide metal oxide semiconductor field effect transistors by spin dependent recombination. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 1011-1014). (Materials Science Forum; Vol. 527-529, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.1011