Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides

M. Okandan, S. J. Fonash, O. O. Awadelkarim, Y. D. Chan

Research output: Contribution to conferencePaperpeer-review

Abstract

Luminescence from reverse biased pn junctions and gate regions of MOSFETs is well known. However, there are four new aspects to the light emission observed in this study from the MOSFET gate areas: (1) the devices used were sub half micron geometry NMOS and PMOS transistors with oxide thicknesses in the range of 45 to 135 angstrom, (2) light emission is observed at the poly gate-birds beak edge, (3) only devices that had antennas designed for the contact etch step and were processed in a high density plasma etch system exhibit this luminescence, and (4) the presence of non-destructive luminescence correlates with the presence of oxide 'soft-breakdown'. The transistors used in this study were LDD CMOS fabricated on 8 in. epi wafers.

Original languageEnglish (US)
Pages168-170
Number of pages3
StatePublished - 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: May 13 1996May 14 1996

Other

OtherProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period5/13/965/14/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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