Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs

Jifa Hao, Mark Rioux, Osama O. Awadelkarim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

High-temperature reverse-bias (HTRB) stress in a dry or a humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB is shown to induce negative-bias temperature instabilities (NBTI) in a parasitic p-channel MOSFET occurring in the n-channel UMOSFET during the stress. The manifestations of the NBTI were gate-controlled shifts in the threshold voltage, V th, and in the drain-to-source leakage current, I DSS, following only humid HTRB stress. SEM inspection of UMOSFETs deprocessed to passivation showed the presence of passivation cracks on the edge termination only in devices that degraded with the HTRB stressing. Our results lead us to conclude that only humid HTRB/NBTI stress causes changes in V th and I DDS. During the stress water or hydrogen species diffuse into the gate oxide through passivation cracks at the edge of the UMOSFET, and react with the gate oxide in the presence of holes and release protons. The protons are not confined to the gate oxide at the trench-bottom and are able to migrate up the oxide on the trench sidewalls.

Original languageEnglish (US)
Title of host publication2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011
Pages129-132
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011 - South Lake Tahoe, CA, United States
Duration: Oct 16 2011Oct 20 2011

Other

Other2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/16/1110/20/11

Fingerprint

Oxides
Passivation
Protons
Temperature
Cracks
Threshold voltage
Leakage currents
Hydrogen
Inspection
Negative bias temperature instability
Scanning electron microscopy
Water

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{24fe8d9637bc456897e7ebf209fcceee,
title = "Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs",
abstract = "High-temperature reverse-bias (HTRB) stress in a dry or a humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB is shown to induce negative-bias temperature instabilities (NBTI) in a parasitic p-channel MOSFET occurring in the n-channel UMOSFET during the stress. The manifestations of the NBTI were gate-controlled shifts in the threshold voltage, V th, and in the drain-to-source leakage current, I DSS, following only humid HTRB stress. SEM inspection of UMOSFETs deprocessed to passivation showed the presence of passivation cracks on the edge termination only in devices that degraded with the HTRB stressing. Our results lead us to conclude that only humid HTRB/NBTI stress causes changes in V th and I DDS. During the stress water or hydrogen species diffuse into the gate oxide through passivation cracks at the edge of the UMOSFET, and react with the gate oxide in the presence of holes and release protons. The protons are not confined to the gate oxide at the trench-bottom and are able to migrate up the oxide on the trench sidewalls.",
author = "Jifa Hao and Mark Rioux and Awadelkarim, {Osama O.}",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/IIRW.2011.6142607",
language = "English (US)",
isbn = "9781457701153",
pages = "129--132",
booktitle = "2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011",

}

Hao, J, Rioux, M & Awadelkarim, OO 2011, Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs. in 2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011., 6142607, pp. 129-132, 2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011, South Lake Tahoe, CA, United States, 10/16/11. https://doi.org/10.1109/IIRW.2011.6142607

Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs. / Hao, Jifa; Rioux, Mark; Awadelkarim, Osama O.

2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011. 2011. p. 129-132 6142607.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs

AU - Hao, Jifa

AU - Rioux, Mark

AU - Awadelkarim, Osama O.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - High-temperature reverse-bias (HTRB) stress in a dry or a humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB is shown to induce negative-bias temperature instabilities (NBTI) in a parasitic p-channel MOSFET occurring in the n-channel UMOSFET during the stress. The manifestations of the NBTI were gate-controlled shifts in the threshold voltage, V th, and in the drain-to-source leakage current, I DSS, following only humid HTRB stress. SEM inspection of UMOSFETs deprocessed to passivation showed the presence of passivation cracks on the edge termination only in devices that degraded with the HTRB stressing. Our results lead us to conclude that only humid HTRB/NBTI stress causes changes in V th and I DDS. During the stress water or hydrogen species diffuse into the gate oxide through passivation cracks at the edge of the UMOSFET, and react with the gate oxide in the presence of holes and release protons. The protons are not confined to the gate oxide at the trench-bottom and are able to migrate up the oxide on the trench sidewalls.

AB - High-temperature reverse-bias (HTRB) stress in a dry or a humid ambient is applied to power n-channel U-shaped trench-gated MOSFET (UMOSFETs). The HTRB is shown to induce negative-bias temperature instabilities (NBTI) in a parasitic p-channel MOSFET occurring in the n-channel UMOSFET during the stress. The manifestations of the NBTI were gate-controlled shifts in the threshold voltage, V th, and in the drain-to-source leakage current, I DSS, following only humid HTRB stress. SEM inspection of UMOSFETs deprocessed to passivation showed the presence of passivation cracks on the edge termination only in devices that degraded with the HTRB stressing. Our results lead us to conclude that only humid HTRB/NBTI stress causes changes in V th and I DDS. During the stress water or hydrogen species diffuse into the gate oxide through passivation cracks at the edge of the UMOSFET, and react with the gate oxide in the presence of holes and release protons. The protons are not confined to the gate oxide at the trench-bottom and are able to migrate up the oxide on the trench sidewalls.

UR - http://www.scopus.com/inward/record.url?scp=84857572248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857572248&partnerID=8YFLogxK

U2 - 10.1109/IIRW.2011.6142607

DO - 10.1109/IIRW.2011.6142607

M3 - Conference contribution

SN - 9781457701153

SP - 129

EP - 132

BT - 2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011

ER -