Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films

Madhab Neupane, Anthony Richardella, Jaime Sánchez-Barriga, Su Yang Xu, Nasser Alidoust, Ilya Belopolski, Chang Liu, Guang Bian, Duming Zhang, Dmitry Marchenko, Andrei Varykhalov, Oliver Rader, Mats Leandersson, Thiagarajan Balasubramanian, Tay Rong Chang, Horng Tay Jeng, Susmita Basak, Hsin Lin, Arun Bansil, Nitin SamarthM. Zahid Hasan

Research output: Contribution to journalArticle

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Abstract

Understanding the spin-texture behaviour of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nanodevices. Here, by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunnelling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We report a systematic binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultrathin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunnelling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model that captures this delicate relationship between quantum tunnelling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nanodevice.

Original languageEnglish (US)
Article number3841
JournalNature communications
Volume5
DOIs
StatePublished - May 12 2014

Fingerprint

Photoelectron Spectroscopy
Spin polarization
Theoretical Models
textures
Textures
Metals
Observation
insulators
Electrons
Polarization
Light
Thin films
Metallic films
Fermi surface
polarization
Light polarization
Photoelectron spectroscopy
Binding energy
Thick films
Cones

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Neupane, Madhab ; Richardella, Anthony ; Sánchez-Barriga, Jaime ; Xu, Su Yang ; Alidoust, Nasser ; Belopolski, Ilya ; Liu, Chang ; Bian, Guang ; Zhang, Duming ; Marchenko, Dmitry ; Varykhalov, Andrei ; Rader, Oliver ; Leandersson, Mats ; Balasubramanian, Thiagarajan ; Chang, Tay Rong ; Jeng, Horng Tay ; Basak, Susmita ; Lin, Hsin ; Bansil, Arun ; Samarth, Nitin ; Hasan, M. Zahid. / Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films. In: Nature communications. 2014 ; Vol. 5.
@article{d3d374b03d294055ad25b0dfdc3a981b,
title = "Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films",
abstract = "Understanding the spin-texture behaviour of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nanodevices. Here, by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunnelling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We report a systematic binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultrathin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunnelling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model that captures this delicate relationship between quantum tunnelling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nanodevice.",
author = "Madhab Neupane and Anthony Richardella and Jaime S{\'a}nchez-Barriga and Xu, {Su Yang} and Nasser Alidoust and Ilya Belopolski and Chang Liu and Guang Bian and Duming Zhang and Dmitry Marchenko and Andrei Varykhalov and Oliver Rader and Mats Leandersson and Thiagarajan Balasubramanian and Chang, {Tay Rong} and Jeng, {Horng Tay} and Susmita Basak and Hsin Lin and Arun Bansil and Nitin Samarth and Hasan, {M. Zahid}",
year = "2014",
month = "5",
day = "12",
doi = "10.1038/ncomms4841",
language = "English (US)",
volume = "5",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

Neupane, M, Richardella, A, Sánchez-Barriga, J, Xu, SY, Alidoust, N, Belopolski, I, Liu, C, Bian, G, Zhang, D, Marchenko, D, Varykhalov, A, Rader, O, Leandersson, M, Balasubramanian, T, Chang, TR, Jeng, HT, Basak, S, Lin, H, Bansil, A, Samarth, N & Hasan, MZ 2014, 'Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films', Nature communications, vol. 5, 3841. https://doi.org/10.1038/ncomms4841

Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films. / Neupane, Madhab; Richardella, Anthony; Sánchez-Barriga, Jaime; Xu, Su Yang; Alidoust, Nasser; Belopolski, Ilya; Liu, Chang; Bian, Guang; Zhang, Duming; Marchenko, Dmitry; Varykhalov, Andrei; Rader, Oliver; Leandersson, Mats; Balasubramanian, Thiagarajan; Chang, Tay Rong; Jeng, Horng Tay; Basak, Susmita; Lin, Hsin; Bansil, Arun; Samarth, Nitin; Hasan, M. Zahid.

In: Nature communications, Vol. 5, 3841, 12.05.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films

AU - Neupane, Madhab

AU - Richardella, Anthony

AU - Sánchez-Barriga, Jaime

AU - Xu, Su Yang

AU - Alidoust, Nasser

AU - Belopolski, Ilya

AU - Liu, Chang

AU - Bian, Guang

AU - Zhang, Duming

AU - Marchenko, Dmitry

AU - Varykhalov, Andrei

AU - Rader, Oliver

AU - Leandersson, Mats

AU - Balasubramanian, Thiagarajan

AU - Chang, Tay Rong

AU - Jeng, Horng Tay

AU - Basak, Susmita

AU - Lin, Hsin

AU - Bansil, Arun

AU - Samarth, Nitin

AU - Hasan, M. Zahid

PY - 2014/5/12

Y1 - 2014/5/12

N2 - Understanding the spin-texture behaviour of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nanodevices. Here, by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunnelling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We report a systematic binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultrathin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunnelling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model that captures this delicate relationship between quantum tunnelling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nanodevice.

AB - Understanding the spin-texture behaviour of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nanodevices. Here, by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunnelling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We report a systematic binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultrathin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunnelling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model that captures this delicate relationship between quantum tunnelling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nanodevice.

UR - http://www.scopus.com/inward/record.url?scp=84900387221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900387221&partnerID=8YFLogxK

U2 - 10.1038/ncomms4841

DO - 10.1038/ncomms4841

M3 - Article

C2 - 24815418

AN - SCOPUS:84900387221

VL - 5

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 3841

ER -