We report high and low-frequency electrically detected magnetic resonance measurements and near-zero-field magnetoresistance measurements on radiation-induced leakage currents in irradiated Si/SiO2 metal-oxide-silicon (MOS) structures. This study identifies the chemical and physical nature of atomic-scale defects involved in radiation-induced leakage currents in SiO2 using an analytical technique. Our results suggest that trap-assisted tunneling through these Si/SiO2 structures involves Pb centers (silicon dangling bonds at the Si/SiO2 interface), rather than only E' centers (oxygen vacancies in the SiO2 film). We utilize simulations of the defects' resonance spectra to provide further evidence for the involvement of interface Pb centers in the radiation-induced leakage currents. These simulations also explore the possibility of additional E' center involvement in the radiation-induced leakage currents.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering